CM300DX-24A Powerex Inc, CM300DX-24A Datasheet - Page 3

• Manufacturer Part Number: CM300DX-24A
• Description: IGBT MOD DUAL 1200V 300A NX SER
• Manufacturer: Powerex Inc
• Series: IGBTMOD™r

Specifications of CM300DX-24A

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.6V @ 15V, 300A
• Current - Collector (ic) (max): 300A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 47nF @ 10V
• Power - Max: 1890W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: Module
• Dc Collector Current: 300A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 10mW
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +150°C
• No. Of Pins: 11
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With: BG2B-5015 - KIT DEV BOARD 2CN 5A FOR IGBTBG2B-3015 - KIT DEV BOARD 2CN 3A FOR IGBTBG2B-1515 - KIT DEV BOARD 1.5A FOR IGBTBG2A-NF - KIT DEV BOARD FOR IGBT
• Igbt Type: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 835-1013

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]
CM300DX-24A
Dual IGBTMOD™ NX-Series Module
300 Amperes/1200 Volts
Rev. 11/08
Electrical and Mechanical Characteristics, T
Inverter Sector
Characteristics
Collector Cutoff Current
Gate-Emitter Threshold Voltage
Gate Leakage Current
Collector-Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Inductive
Load
Switch
Time
Reverse Recovery Time*
Reverse Recovery Charge*
Emitter-Collector Voltage*
Thermal and Mechanical Characteristics, T
Characteristics
Module Lead Resistance
Thermal Resistance, Junction to Case**
Thermal Resistance, Junction to Case**
Contact Thermal Resistance**
Internal Gate Resistance
External Gate Resistance
NTC Thermistor Sector, T
Characteristics
Zero Power Resistance
Deviation of Resistance
B Constant
Power Dissipation
*Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
**T
***R
T
C
25
25
, T
: Resistance at Absolute Temperature T
f
= 25(°C) +273.15 = 298.15(K), T
measured point is just under the chips.
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
j
50
= 25°C unless otherwise specified
= 50(°C) + 273.15 = 323.15(K)
25
(K), R
R
R
V
B
V
Symbol
Symbol
R
Symbol
CE(sat)
t
t
R
th(j-c)
R
∆R/R
th(j-c)
(25/50)
I
I
C
50
GE(th)
C
C
V
d(on)
d(off)
CES
GES
th(c-f)
P
Q
Qrr
R
lead
t
Gint
oes
R
res
t
t
EC
ies
25
rr
: Resistance at Absolute Temperature T
r
G
f
G
Q
D
j
B
j
= 25°C unless otherwise specified
(25/50)
= 25°C unless otherwise specified
Inductive Load Switching Operation
V
Main Termnals-Chip (Per Switch)
CC
I
C
I
C
= In(R
T
= 600V, I
Thermal Grease Applied
= 300A, V
I
V
C
= 300A, V
C
R
I
V
CC
E
V
V
= 100°C, R
G
I
CE
= 300A, V
C
= 300A, V
I
CE
GE
E
= 1.0Ω, I
Test Conditions
Test Conditions
= 600V, I
25
= 30mA, V
V
= 10V, V
T
Test Conditions
= 300A, V
T
T
T
GE
Per FWDi
= V
= V
Per IGBT
C
C
/ R
C
C
C
= 125°C
GE
= 300A, V
= 25°C
= 25°C
= 25°C
CES
GES
GE
= ±15V,
50
GE
E
GE
) / (1/T
= 15V, T
100
C
= 15V, T
GE
, V
, V
= 300A,
CE
= 300A,
GE
= 15V, Chip
= 0V, Chip
GE
CE
= 493Ω
50
= 0V
= 10V
= 0V
(K),
GE
25
= 0V
= 0V
j
j
= 125°C
– 1/T
= 25°C
= 15V
50
)***
4.85
Min.
Min.
Min.
–7.3
2.1
4.2
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6
0.015
1350
3375
5.00
Typ.
Typ.
Typ.
2.0
2.2
8.0
2.6
2.5
3.0
6.0
1.9
1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
7
0.066
Max.
Max.
Max.
0.12
5.15
47.0
+7.8
550
180
600
600
250
0.5
2.6
4.0
0.9
3.4
3.9
1.0
7.8
—
—
—
—
—
—
—
10
—
10
8
°C/W
°C/W
°C/W
Units
Volts
Volts
Volts
Volts
Volts
Volts
Units
Units
mW
mΩ
mA
nC
µC
kΩ
µA
nF
nF
nF
ns
ns
ns
ns
ns
%
Ω
Ω
Ω
K
3