CM200DY-24NF Powerex Inc, CM200DY-24NF Datasheet - Page 4
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CM200DY-24NF
Manufacturer Part Number
CM200DY-24NF
Description
IGBT MOD DUAL 1200V 200A NF SER
Manufacturer
Powerex Inc
Series
IGBTMOD™r
Type
IGBT Moduler
Datasheet
1.CM200DY-24NF.pdf
(4 pages)
Specifications of CM200DY-24NF
Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.5V @ 15V, 200A
Current - Collector (ic) (max)
200A
Current - Collector Cutoff (max)
1mA
Input Capacitance (cies) @ Vce
47nF @ 10V
Power - Max
1130W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
Module
Transistor Polarity
N Channel
Dc Collector Current
200A
Power Dissipation Pd
1.13kW
Collector Emitter Voltage V(br)ceo
1.2kV
Continuous Collector Current Ic
200A
Collector Emitter Saturation Voltage Vce(sat)
2.5V
Prx Availability
RequestQuote
Distributorinventory
View
Voltage
1200V
Current
200A
Circuit Configuration
Dual
Rohs Compliant
Yes
Recommended Gate Driver
VLA504
Recommended Dc To Dc Converter
VLA106-15242 or VLA106-24242
Interface Circuit Ref Design
BG2B-3015
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
BG2B-5015 - KIT DEV BOARD 2CN 5A FOR IGBTBG2B-3015 - KIT DEV BOARD 2CN 3A FOR IGBTBG2B-1515 - KIT DEV BOARD 1.5A FOR IGBTBG2A-NF - KIT DEV BOARD FOR IGBT
Igbt Type
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
835-1012
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CM200DY-24NF
Manufacturer:
MITSUBISHI/三菱
Quantity:
20 000
Part Number:
CM200DY-24NF
Quantity:
55
4
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM200DY-24NF
Dual IGBTMOD™ NF-Series Module
200 Amperes/1200 Volts
10
10
10
10
10
10
3
2
1
2
1
0
10
10
REVERSE RECOVERY CHARACTERISTICS
1
0
V
V
R
T
Inductive Load
j
CC
GE
G
= 25°C
= 1.6Ω
GATE RESISTANCE (TYPICAL)
EMITTER CURRENT, I
= 600V
= 15V
GATE RESISTANCE, R
SWITCHING LOSS VS.
(TYPICAL)
10
10
2
1
E
V
V
I
T
Inductive Load
C Snubber at Bus
C
, (AMPERES)
CC
GE
j
= 125°C
= 200A
G
= 600V
= 15V
, (Ω)
E
E
SW(on)
SW(off)
I
t
rr
rr
10
10
3
2
10
10
10
3
2
1
10
10
10
10
20
16
12
8
4
0
-1
-2
-3
0
10
0
-3
I
Single Pulse
T
Per Unit Base =
R
R
C
C
IMPEDANCE CHARACTERISTICS
th(j-c)
th(j-c)
0.11°C/W
(IGBT)
0.19°C/W
(FWDi)
= 200A
= 25°C
400
10
GATE CHARGE VS. V GE
=
=
TRANSIENT THERMAL
GATE CHARGE, Q
-2
(IGBT & FWDi)
800
V
CC
TIME, (s)
10
10
= 400V
-1
-5
1200
G
V
, (nC)
CC
10
10
= 600V
1600
-4
0
2000
10
10
-3
1
10
10
10
-1
-2
-3
10
10
10
2
1
0
10
1
V
V
R
T
Inductive Load
C Snubber at Bus
CC
GE
j
G
COLLECTOR CURRENT (TYPICAL)
= 125°C
COLLECTOR CURRENT, I
= 1.6Ω
= 600V
= 15V
SWITCHING LOSS VS.
10
2
C
, (AMPERES)
E
E
SW(on)
SW(off)
10
3