CM200DY-34A Powerex Inc, CM200DY-34A Datasheet - Page 2

• Manufacturer Part Number: CM200DY-34A
• Description: IGBT MOD DUAL 1700V 200A A SER
• Manufacturer: Powerex Inc
• Series: IGBTMOD™r
• Type: IGBT Moduler

Specifications of CM200DY-34A

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1700V
• Vce(on) (max) @ Vge, Ic: 2.8V @ 15V, 200A
• Current - Collector (ic) (max): 200A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 49.4nF @ 10V
• Power - Max: 1980W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: Module
• Module Configuration: Dual
• Transistor Polarity: N Channel
• Dc Collector Current: 200A
• Collector Emitter Voltage Vces: 1.7kV
• Power Dissipation Pd: 1.98kW
• Operating Temperature Range: -40°C To +150°C
• Distributorinventory: View
• Voltage: 1700V
• Current: 200A
• Circuit Configuration: Dual
• Rohs Compliant: Yes
• Recommended Gate Driver: VLA500K-01R
• Interface Circuit Ref Design: BG2A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With: BG2B-5015 - KIT DEV BOARD 2CN 5A FOR IGBTBG2B-3015 - KIT DEV BOARD 2CN 3A FOR IGBTBG2B-1515 - KIT DEV BOARD 1.5A FOR IGBTBG2A-NF - KIT DEV BOARD FOR IGBT
• Igbt Type: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

2
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com
CM200DY-34A
Dual IGBTMOD™ A-Series Module
200 Amperes/1700 Volts
Absolute Maximum Ratings, T j = 25°C unless otherwise specified
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E Short)
Gate-Emitter Voltage (C-E Short)
Collector Current (DC, T C = 109°C)*
Peak Collector Current (Pulse Repetition)*
Emitter Current (T C = 25°C)
Peak Emitter Current (Pulse Repetition)*
Maximum Collector Dissipation (T C = 25°C, T j ≤ 150°C)*
Mounting Torque, M5 Main Terminal
Mounting Torque, M6 Mounting
Weight
Isolation Voltage (Main Terminal to Baseplate, f = 60Hz, AC 1 min.)
Static Electrical Characteristics, T j = 25°C unless otherwise specified
Characteristics
Collector-Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Total Gate Charge
Emitter-Collector Voltage
Dynamic Electrical Characteristics, T j = 25°C unless otherwise specified
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Inductive
Load
Switch
Time
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
*1 Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
*2 Pulse width and repetition rate should be such that device junction temperature (T j ) does not exceed T j(max) rating.
*3 Pulse width and repetition rate should be such as to cause negligible temperature rise.
*4 Case temperature (T C ), and heatsink temperature (T f ) measured point is just under the chips.
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
4
2
2
V CE(sat)
V GE(th)
Symbol
Symbol
V EC *
t d(on)
t d(off)
I GES
I CES
C oes
C res
Q rr *
C ies
t rr *
Q G
t r
t f
1
1
1
2,
*
4
V CC = 1000V, I C = 200A, V GE = 15V
I C = 200A, V GE = 15V, T j = 125°C*
I C = 200A, V GE = 15V, T j = 25°C*
V GE1 = V GE2 = 15V, R G = 2.4Ω,
V CC = 1000V, I C = 200A,
V CE = V CES , V GE = 0V
V GE = V GES , V CE = 0V
I C = 20mA, V CE = 10V
I E = 200A, V GE = 0V*
V CE = 10V, V GE = 0V
Switching Operation,
Inductive Load
Test Conditions
Test Conditions
I E = 200A
Symbol
V GES
V CES
I EM *
3
V ISO
T stg
I CM
I E *
P C
I C
—
—
—
T j
1
1
3
3
Min.
Min.
5.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
CM200DY-34A
–40 to 150
–40 to 125
1700
1980
3500
±20
200
400
200
400
400
30
40
1330
2.45
Typ.
Typ.
2.2
7.0
20
—
—
—
—
—
—
—
—
—
—
—
Max.
Max.
550
190
750
350
450
2.0
8.5
2.8
3.0
1.0
—
—
—
49.4
5.6
1.06
01/10 Rev. 1
Amperes
Amperes
Amperes
Amperes
Grams
Watts
Units
Volts
Volts
Volts
in-lb
in-lb
°C
°C
Volts
Volts
Volts
Volts
Units
Units
mA
µA
nC
µC
ns
ns
ns
ns
ns
nf
nf
nf