CM400DY-24A Powerex Inc, CM400DY-24A Datasheet - Page 3

IGBT MOD DUAL 1200V 400A A SER

CM400DY-24A

Manufacturer Part Number
CM400DY-24A
Description
IGBT MOD DUAL 1200V 400A A SER
Manufacturer
Powerex Inc
Series
IGBTMOD™r
Type
IGBT Moduler
Datasheet

Specifications of CM400DY-24A

Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3V @ 15V, 400A
Current - Collector (ic) (max)
400A
Current - Collector Cutoff (max)
1mA
Input Capacitance (cies) @ Vce
70nF @ 10V
Power - Max
2710W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
Module
Transistor Polarity
N Channel
Dc Collector Current
400A
Collector Emitter Voltage Vces
1.2kV
Power Dissipation Pd
2.71kW
Collector Emitter Voltage V(br)ceo
1.2kV
Prx Availability
RequestQuote
Distributorinventory
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Voltage
1200V
Current
400A
Circuit Configuration
Dual
Rohs Compliant
Yes
Recommended Gate Driver
VLA503
Recommended Dc To Dc Converter
VLA106-15242 or VLA106-24242
Interface Circuit Ref Design
BG2B-5015
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
BG2B-5015 - KIT DEV BOARD 2CN 5A FOR IGBTBG2B-3015 - KIT DEV BOARD 2CN 3A FOR IGBTBG2B-1515 - KIT DEV BOARD 1.5A FOR IGBTBG2A-NF - KIT DEV BOARD FOR IGBT
Igbt Type
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
835-1018

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CM400DY-24A
Dual IGBTMOD™ A-Series Module
400 Amperes/1200 Volts
Thermal and Mechanical Characteristics, T
Characteristics
Thermal Resistance, Junction to Case*
Thermal Resistance, Junction to Case*
Contact Thermal Resistance
External Gate Resistance
*T
Rev. 10/07
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
C
800
600
400
200
, T
10
10
10
0
3
2
1
f
measured point is just under the chips.
0
0
V
COLLECTOR-EMITTER VOLTAGE, V
EMITTER-COLLECTOR VOLTAGE, V
GE
20V
FORWARD CHARACTERISTICS
=
OUTPUT CHARACTERISTICS
1
2
FREE-WHEEL DIODE
15
13
(TYPICAL)
(TYPICAL)
2
4
6
3
T
T
CE
EC
j
j
T
= 25°C
= 125°C
, (VOLTS)
j
4
, (VOLTS)
8
= 25 °C
12
11
10
9
10
5
R
R
Symbol
R
th(j-c)
th(j-c)
th(c-f)
R
10
10
10
10
G
-1
0
4
3
2
1
2
1
0
10
Q
D
SATURATION VOLTAGE CHARACTERISTICS
0
-1
COLLECTOR-EMITTER VOLTAGE, V
V
V
j
GE
GE
COLLECTOR-CURRENT, I
= 25°C unless otherwise specified
Per 1/2 Module, Thermal Grease Applied
= 15V
= 0V
T
T
200
j
j
CAPACITANCE VS. V CE
COLLECTOR-EMITTER
= 25°C
= 125°C
10
0
(TYPICAL)
(TYPICAL)
Per FWDi 1/2 Module
Per IGBT 1/2 Module
400
Test Conditions
C
10
, (AMPERES)
1
600
C
C
C
CE
oes
res
ies
, (VOLTS)
800
10
2
10
10
10
10
8
6
4
2
0
3
2
1
10
SATURATION VOLTAGE CHARACTERISTICS
6
T
1
Min.
0.78
I
j
C
= 25°C
GATE-EMITTER VOLTAGE, V
= 160A
COLLECTOR CURRENT, I
SWITCHING CHARACTERISTICS
8
t
t
d(on)
d(off)
COLLECTOR-EMITTER
10
HALF-BRIDGE
0.02
Typ.
(TYPICAL)
(TYPICAL)
12
10
2
14
I
C
I
C
= 800A
C
= 400A
0.046
0.085
V
V
R
T
Inductive Load
Max.
, (AMPERES)
CC
GE
j
10
GE
G
16
= 125°C
= 0.78Ω
, (VOLTS)
= 600V
= 15V
t
t
18
r
f
°C/W
°C/W
°C/W
Units
10
20
Ω
3
3

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