CM600HA-12H Powerex Inc, CM600HA-12H Datasheet - Page 2

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CM600HA-12H

Manufacturer Part Number
CM600HA-12H
Description
IGBT MOD SGL 600V 600A H SER
Manufacturer
Powerex Inc
Series
IGBTMOD™r
Datasheet

Specifications of CM600HA-12H

Configuration
Single
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.8V @ 15V, 600A
Current - Collector (ic) (max)
600A
Current - Collector Cutoff (max)
1mA
Input Capacitance (cies) @ Vce
60nF @ 10V
Power - Max
2100W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
Module
Transistor Polarity
N Channel
Dc Collector Current
600A
Collector Emitter Voltage Vces
600V
Power Dissipation Pd
2.1kW
Operating Temperature Range
-40°C To +150°C
No. Of Pins
4
Rohs Compliant
No
Module Configuration
Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Igbt Type
-

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CM600HA-12H
Manufacturer:
MITSUBISHI
Quantity:
26
Part Number:
CM600HA-12H
Manufacturer:
SEMIKRON
Quantity:
726
Part Number:
CM600HA-12H
Quantity:
55
178
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM600HA-12H
Single IGBTMOD™ H-Series Module
600 Amperes/600 Volts
Absolute Maximum Ratings, T
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage
Collector Current
Peak Collector Current
Diode Forward Current
Diode Forward Surge Current
Power Dissipation
Max. Mounting Torque M8 Terminal Screws
Max. Mounting Torque M6 Mounting Screws
Module Weight (Typical)
V Isolation
* Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.
Static Electrical Characteristics, T
Characteristics
Collector-Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Total Gate Charge
Diode Forward Voltage
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, T
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Resistive
Load
Switching
Times
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Thermal and Mechanical Characteristics, T
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
j
= 25 C unless otherwise specified
j
= 25 C unless otherwise specified
V
V
Symbol
Symbol
Symbol
R
R
R
CE(sat)
t
t
I
I
C
GE(th)
V
C
C
d(on)
d(off)
CES
GES
th(j-c)
th(j-c)
th(c-f)
Q
j
Q
t
oes
FM
t
ies
res
t
= 25 C unless otherwise specified
rr
G
r
f
rr
j
= 25 C unless otherwise specified
Per Module, Thermal Grease Applied
V
I
C
CC
V
V
I
I
E
E
GE
GE1
= 600A, V
= 600V, I
= 600A, di
= 600A, di
V
V
V
I
I
C
= 0V, V
C
CC
I
CE
GE
E
= V
= 60mA, V
= 600A, V
= 600A, V
Test Conditions
Test Conditions
Test Conditions
= 300V, I
= V
= V
GE2
Per FWDi
Per IGBT
GE
C
CE
CES
GES
E
E
= 600A, V
= 15V, R
/dt = –1200A/ s
/dt = –1200A/ s
= 15V, T
= 10V, f = 1MHz
, V
, V
GE
CE
GS
C
GE
CE
= 600A,
= 15V
= 10V
= 0V
G
= 0V
= 0V
j
GS
= 150 C
= 1.0
Symbol
V
V
V
T
I
I
= 15V
GES
RMS
CES
CM
FM
P
I
T
I
stg
C
F
d
j
Min.
Min.
Min.
4.5
CM600HA-12H
–40 to 150
–40 to 125
1200*
1200*
2100
2500
600
600
600
560
95
26
1800
20
2.15
1.62
Typ.
Typ.
Typ.
6.0
2.1
Max.
2.8**
Max.
Max.
0.06
0.12
0.035
350
700
350
300
110
1.0
0.5
7.5
2.8
60
21
12
Amperes
Amperes
Amperes
Amperes
Grams
Watts
Volts
Volts
Volts
Units
in-lb
in-lb
Units
Volts
Volts
Volts
Volts
Units
Units
C
C
mA
C/W
C/W
C/W
nC
nF
nF
nF
ns
ns
ns
ns
ns
A
C

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