CM400DU-5F Powerex Inc, CM400DU-5F Datasheet - Page 2
CM400DU-5F
Manufacturer Part Number
CM400DU-5F
Description
IGBT MOD DUAL 250V 400A F SER
Manufacturer
Powerex Inc
Series
IGBTMOD™r
Datasheet
1.CM400DU-5F.pdf
(4 pages)
Specifications of CM400DU-5F
Igbt Type
Trench
Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (max)
250V
Vce(on) (max) @ Vge, Ic
1.7V @ 10V, 400A
Current - Collector (ic) (max)
400A
Current - Collector Cutoff (max)
1mA
Input Capacitance (cies) @ Vce
110nF @ 10V
Power - Max
890W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
Module
Transistor Polarity
N Channel
Dc Collector Current
400A
Collector Emitter Voltage Vces
250V
Power Dissipation Pd
890W
Collector Emitter Voltage V(br)ceo
250V
Operating Temperature Range
-40°C To +150°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
CM400DU-5F
Manufacturer:
MITSUBISHI
Quantity:
26
Part Number:
CM400DU-5F
Manufacturer:
MIT
Quantity:
20 000
2
2
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM400DU-5F
Trench Gate Design Dual IGBTMOD™
400 Amperes/250 Volts
Absolute Maximum Ratings, T
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current (T
Peak Collector Current (T
Emitter Current** (T
Peak Emitter Current**
Maximum Collector Dissipation (T
Mounting Torque, M6 Main Terminal
Mounting Torque, M6 Mounting
Weight
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
* Pulse width and repetition rate should be such that the device junction temperature (T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, T
Characteristics
Collector-Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Total Gate Charge
Emitter-Collector Voltage*
* Pulse width and repetition rate should be such that the device junction temperature (T
Dynamic Electrical Characteristics, T
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Resistive
Load
Switch
Times
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Thermal and Mechanical Characteristics, T
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
* T
C
measured point is just under chip.
c
c
= 25°C)
= 25°C)
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
j
≤ 150°C)
c
= 25°C)
j
= 25 °C unless otherwise specified
j
R
V
R
R
= 25 °C unless otherwise specified
V
Symbol
Symbol
Symbol
R
th(j-c´)
CE(sat)
t
t
th(j-c)
th(j-c)
I
I
C
GE(th)
V
C
C
d(on)
d(off)
CES
GES
th(c-f)
Q
j
Q
t
oes
EC
res
t
t
ies
rr
G
= 25 °C unless otherwise specified
r
f
rr
Q
D
Q
j
= 25 °C unless otherwise specified
Per Module, Thermal Grease Applied
V
I
I
C
CC
C
= 400A, V
= 400A, V
Load Switching Operation
= 100V, I
V
V
V
I
Per IGBT 1/2 Module*
C
V
Per FWDi 1/2 Module
Per IGBT 1/2 Module
I
CC
R
CE
GE
V
E
CE
GE1
G
= 40mA, V
= 400A, V
= 100V, I
= V
= V
= 6.3 , Resistive
= 10V, V
I
I
Test Conditions
Test Conditions
Test Conditions
GE
E
E
= V
C
GE
CES
GES
= 400A
= 400A
j
j
= 400A, V
) does not exceed T
) does not exceed T
Symbol
= 10V, T
GE2
V
V
= 10V, T
T
V
I
I
, V
, V
CES
GES
CM
EM
P
I
I
T
stg
–
–
–
iso
CE
C
C
E
GE
GE
c
j
GE
CE
= 10V,
= 400A,
= 10V
= 0V
= 0V
= 0V
= 0V
j
j
GE
= 125°C
= 25°C
= 10V
j(max)
j(max)
rating.
rating.
CM400DU-5F
Min.
Min.
Min.
-40 to 150
-40 to 125
–
–
3.0
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
2500
800*
250
±20
400
400
800*
890
400
40
40
1500
16.0
Typ.
Typ.
Typ.
0.04
–
–
4.0
1.2
1.1
–
–
–
–
–
–
–
–
–
–
–
–
1100
110
850
400
500
300
Max.
Max.
Max.
1.0
0.5
5.0
1.7
–
–
2.0
7.0
3.8
–
0.14
0.24
0.08
–
Amperes
Amperes
Amperes
Amperes
Grams
Watts
Units
Volts
Volts
Volts
Units
Units
Units
in-lb
in-lb
°C/W
°C/W
°C/W
°C/W
°C
°C
Volts
Volts
Volts
Volts
mA
µA
nC
µC
ns
ns
ns
ns
ns
nf
nf
nf