CM400DY-24NF Powerex Inc, CM400DY-24NF Datasheet - Page 2

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CM400DY-24NF

Manufacturer Part Number
CM400DY-24NF
Description
IGBT MOD DUAL 1200V 400A NF SER
Manufacturer
Powerex Inc
Series
IGBTMOD™r
Type
IGBT Moduler
Datasheet

Specifications of CM400DY-24NF

Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.5V @ 15V, 400A
Current - Collector (ic) (max)
400A
Current - Collector Cutoff (max)
1mA
Input Capacitance (cies) @ Vce
94nF @ 10V
Power - Max
1470W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
Module
Prx Availability
RequestQuote
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Voltage
1200V
Current
400A
Circuit Configuration
Dual
Rohs Compliant
Yes
Recommended Gate Driver
VLA503
Recommended Dc To Dc Converter
VLA106-15242 or VLA106-24242
Interface Circuit Ref Design
BG2B-5015
For Use With
BG2B-5015 - KIT DEV BOARD 2CN 5A FOR IGBTBG2B-3015 - KIT DEV BOARD 2CN 3A FOR IGBTBG2B-1515 - KIT DEV BOARD 1.5A FOR IGBTBG2A-NF - KIT DEV BOARD FOR IGBT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-

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2
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM400DY-24NF
Dual IGBTMOD™ NF-Series Module
400 Amperes/1200 Volts
Absolute Maximum Ratings, T
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E Short)
Gate-Emitter Voltage (C-E Short)
Collector Current*** (DC, T
Peak Collector Current
Emitter Current** (T
Peak Emitter Current**
Maximum Collector Dissipation (T
Mounting Torque, M6 Main Terminal
Mounting Torque, M6 Mounting
Weight
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Static Electrical Characteristics, T
Characteristics
Collector-Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Total Gate Charge
Emitter-Collector Voltage**
Dynamic Electrical Characteristics, T
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Inductive
Load
Switch
Time
Diode Reverse Recovery Time**
Diode Reverse Recovery Charge**
*Pulse width and repetition rate should be such that device junction temperature (T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
***T
measured point is just under the chips. If this value is used, R
C
= 25°C)
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
= 111°C)
C
= 25°C, T
j
= 25 °C unless otherwise specified
j
j
≤ 150°C)
= 25 °C unless otherwise specified
V
V
Symbol
Symbol
CE(sat)
t
t
I
I
C
GE(th)
C
V
C
d(on)
d(off)
GES
CES
Q
j
Q
t
oes
EC
t
ies
res
t
= 25 °C unless otherwise specified
rr
r
f
G
rr
th(f-a)
V
I
V
I
C
CC
C
GE1
= 400A, V
= 400A, V
should be measured just under the chips.
= 600V, I
V
V
V
I
C
V
= V
I
CC
Switching Operation,
CE
GE
E
CE
= 40mA, V
= 400A, V
GE2
Inductive Load
Test Conditions
Test Conditions
= 600V, I
= V
= V
j
) does not exceed T
= 10V, V
I
GE
E
GE
C
CES
GES
= 15V, R
= 400A
= 400A, V
= 15V, T
= 15V, T
, V
, V
CE
C
GE
GE
GE
CE
= 400A,
= 10V
= 0V
G
= 0V
= 0V
= 0V
j
j
GE
= 0.73Ω,
= 125°C
= 25°C
Symbol
V
V
V
T
I
j(max)
I
= 15V
GES
P
CES
CM
EM
I
T
I
ISO
stg
C
E
C
j
rating.
Min.
Min.
6.0
CM400DY-24NF
–40 to 150
–40 to 125
1200
1470
2500
800*
800*
±20
400
400
580
40
40
2700
Typ.
Typ.
7.0
1.8
2.0
20
Max.
Max.
600
160
700
350
250
1.0
0.5
8.0
2.5
3.2
94
8.0
1.8
Amperes
Amperes
Amperes
Amperes
Grams
Watts
Volts
Volts
Volts
Units
in-lb
in-lb
°C
°C
Volts
Volts
Volts
Volts
Units
Units
mA
µA
nC
µC
ns
ns
ns
ns
ns
nf
nf
nf

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