CM900DU-24NF Powerex Inc, CM900DU-24NF Datasheet - Page 2

• Manufacturer Part Number: CM900DU-24NF
• Description: IGBT MOD DUAL 1200V 900A NF MEGA
• Manufacturer: Powerex Inc
• Series: IGBTMOD™r
• Type: IGBT Moduler

Specifications of CM900DU-24NF

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 900A
• Current - Collector (ic) (max): 900A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 140nF @ 10V
• Power - Max: 2550W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: Module
• Transistor Polarity: N Channel
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 2.55kW
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +150°C
• No. Of Pins: 13
• Prx Availability: RequestQuote
• Distributorinventory: View
• Voltage: 1200V
• Current: 900A
• Circuit Configuration: Dual
• Rohs Compliant: No
• Recommended Gate Driver: VLA500
• Interface Circuit Ref Design: BG2A-NF
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• For Use With: BG2B-5015 - KIT DEV BOARD 2CN 5A FOR IGBTBG2B-3015 - KIT DEV BOARD 2CN 3A FOR IGBTBG2B-1515 - KIT DEV BOARD 1.5A FOR IGBTBG2A-NF - KIT DEV BOARD FOR IGBT
• Igbt Type: -
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant, Contains lead / RoHS non-compliant
• Other names: 835-1027

2
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com
CM900DU-24NF
Mega Power Dual™ IGBTMOD
900 Amperes/1200 Volts
Absolute Maximum Ratings, T
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current DC (T
Peak Collector Current (T
Emitter Current***
Peak Emitter Current***
Maximum Collector Dissipation (T
Mounting Torque, M6 Mounting Screws
Mounting Torque, M6 Main Terminal Screw
Weight (Typical)
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Static Electrical Characteristics, T
Characteristics
Collector-Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
(Without Lead Resistance)
Module Lead Resistance
Total Gate Charge
Emitter-Collector Voltage***
Dynamic Electrical Characteristics, T
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Inductive
Load
Switch
Times
Diode Reverse Recovery Time***
Diode Reverse Recovery Charge***
* Pulse width and repetition rate should be such that the device junction temperature (T
** T C’ measurement points is just under the chips. If this value is used, R
***Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
C'
j
= 96°C)**
≤ 150°C)
j
< 150°C) (T
j
= 25°C unless otherwise specified
j
C'
= 25°C unless otherwise specified
V
V
Symbol
Symbol
R
(Chip)
CE(sat)
t
t
I
I
C
GE(th)
V
C
C
d(on)
d(off)
CES
GES
(lead)
= 25°C)
Q
j
Q
t
oes
EC
res
t
t
ies
rr
= 25°C unless otherwise specified
r
G
f
rr
V
I
I
C
CC
C
th(f-a)
= 900A, V
= 900A, V
= 600V, I
I
V
C
V
I
I
C
V
I
C
CE
GE
V
Switching Operation
E
= 900A, Terminal-chip
should be measured just under the chips.
CE
GE1
= 90mA, V
= 900A, I
= 900A, V
Inductive Load
Test Conditions
= V
= V
V
R
= 10V, V
Test Conditions
CC
G
GE
= V
GE
C
CES
GES
= 0.35Ω,
j
) does not exceed T
= 900A, V
= 600V,
Symbol
GE2
= 15V, T
V
V
= 15V, T
T
V
I
I
, V
, V
GES
P
E
CES
CM
EM
T
I
I
stg
–
–
–
CE
C
iso
GE
E
GE
C
j
= 900A,
GE
CE
= 15V,
= 10V
= 0V
= 0V
= 0V
= 0V
j
j
GE
= 125°C
= 25°C
= 15V
j(max)
rating.
CM900DU-24NF
Min.
Min.
-40 to 150
-40 to 125
–
–
6
–
–
–
–
–
–
–
–
–
–
–
–
–
–
1800*
1800*
1200
2550
1400
2500
±20
900
900
40
40
4800
50
Typ.
Typ.
–
–
7
2.0
0.143
–
–
–
–
–
–
–
–
–
1.8
140
600
200
800
300
500
Max.
Max.
16
1
8
2.5
–
–
–
3.2
3
–
1.0
02/10 Rev. 1
Amperes
Amperes
Amperes
Amperes
Grams
Watts
Units
Volts
Volts
Volts
Units
Units
in-lb
in-lb
°C
°C
Volts
Volts
Volts
Volts
mA
mΩ
μA
nC
μC
nF
nF
nF
ns
ns
ns
ns
ns