CPV363M4F Vishay, CPV363M4F Datasheet - Page 3
![IGBT SIP MODULE 600V 9A IMS-2](/photos/14/29/142934/vs-cpv363m4u_sml.jpg)
CPV363M4F
Manufacturer Part Number
CPV363M4F
Description
IGBT SIP MODULE 600V 9A IMS-2
Manufacturer
Vishay
Datasheet
1.CPV363M4F.pdf
(10 pages)
Specifications of CPV363M4F
Configuration
Three Phase Inverter
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.63V @ 15V, 16A
Current - Collector (ic) (max)
16A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
1.1nF @ 30V
Power - Max
36W
Input
Standard
Ntc Thermistor
No
Mounting Type
Through Hole
Package / Case
19-SIP (13 Leads), IMS-2
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Igbt Type
-
Other names
*CPV363M4F
VS-CPV363M4F
VS-CPV363M4F
VSCPV363M4F
VSCPV363M4F
VS-CPV363M4F
VS-CPV363M4F
VSCPV363M4F
VSCPV363M4F
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
CPV363M4F
Manufacturer:
IR
Quantity:
3 500
14
12
10
Fig. 2 - Typical Output Characteristics
1 0 0
8
6
4
2
0
1 0
0.1
1
1
V
T = 25°C
C E
J
, Collector-to-Emitter Voltage (V)
T = 150°C
J
Fig. 1 - Typical Load Current vs. Frequency
V
20µs PULSE WIDTH
G E
= 15V
(Load Current = I
1
f, Frequency (KHz)
1 0
A
RMS
of fundamental)
1 0 0
Fig. 3 - Typical Transfer Characteristics
1 0
1
5
10
T = 150°C
J
V
G E
6
T c = 9 0° C
T j = 1 25 ° C
P ow er F ac tor = 0 .8
M o d ula tio n D ep th = 1 .15
V c c = 50 % o f R a ted V o lta g e
, Gate-to-Emitter Voltage (V)
CPV363M4F
T = 25°C
7
J
V
5µs PULSE WIDTH
8
C C
= 50V
100
9
2.93
4.10
3.51
1.76
2.34
1.17
0.59
0.00
1 0
A