GA150TD120U Vishay, GA150TD120U Datasheet - Page 4

• Manufacturer Part Number: GA150TD120U
• Description: IGBT FAST 1200V 150A INT-A-PAK
• Manufacturer: Vishay

Specifications of GA150TD120U

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.9V @ 15V, 150A
• Current - Collector (ic) (max): 150A
• Current - Collector Cutoff (max): 2mA
• Input Capacitance (cies) @ Vce: 25.63nF @ 30V
• Power - Max: 780W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: INT-A-PAK (3 + 4)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -

GA150TD120U
Fig. 4 - Maximum Collector Current vs. Case
4
200
150
100
0.01
50
0.1
0
0.0001
1
25
D = 0.50
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
0.10
0.05
0.02
0.01
0.20
50
T , Case Temperature ( C)
C
Temperature
0.001
75
(TH E R M A L R E S P O N S E )
S IN G LE P U LS E
100
0.01
t , R e cta n g u la r P u ls e D u ra tio n (se c)
°
1
125
150
0.1
Fig. 5 - Typical Collector-to-Emitter Voltage
4.0
3.0
2.0
1.0
1
-60 -40 -20
V
80 us PULSE WIDTH
GE
vs. Junction Temperature
Notes:
1. Duty factor D = t / t
2. Peak T = P
= 15V
T , Junction Temperature ( C)
J
0
J
1 0
20 40
DM
x Z
1
thJC
60
2
P
DM
+ T
80 100 120 140 160
1 0 0
www.irf.com
C
I =
I =
I =
t
C
C
C
1
t 2
300
150
75
( °C )
°
A
A
A
1 0 0 0
A