GA200TD120U Vishay, GA200TD120U Datasheet - Page 5

• Manufacturer Part Number: GA200TD120U
• Description: IGBT FAST 1200V 200A INT-A-PAK
• Manufacturer: Vishay

Specifications of GA200TD120U

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.1V @ 15V, 200A
• Current - Collector (ic) (max): 200A
• Current - Collector Cutoff (max): 2mA
• Input Capacitance (cies) @ Vce: 37.343nF @ 30V
• Power - Max: 1040W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: Dual INT-A-PAK (3 + 8)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -
• Other names: VS-GA200TD120U; VS-GA200TD120U; VSGA200TD120U; VSGA200TD120U

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Fig. 9 - Typical Switching Losses vs. Gate
70000
60000
50000
40000
30000
20000
10000
140
130
120
110
100
90
80
0
0

Fig. 7 - Typical Capacitance vs.
V
V
T
I
1
J
C
CC
GE
Collector-to-Emitter Voltage
= 720V
= 15V
= 125 C
= 200A
R
V
10
G
CE
°

, Gate Resistance (Ohm)
V
C
C
C
, Collector-to-Emitter Voltage (V)
Resistance
GE
ies
res
oes

C oes
C res
C ies
=
=
=
=
20


0V,
C
C
C
ge
gc
ce
+ C
+ C
10
f = 1MHz
gc ,
gc
30
C
ce
SHORTED
40
50
100
1000
100
20
16
12
10
8
4
0
Fig. 10 - Typical Switching Losses vs.
-60 -40 -20
0


V
R
V
V
R
I
Fig. 8 - Typical Gate Charge vs.
GE
CC
CC
C
G
G1
=15 ;R
= 400V
= 200A
= 15V
= 720V
= Ohm
Gate-to-Emitter Voltage
249A
Junction Temperature
T , Junction Temperature ( C )
400
Q , Total Gate Charge (nC)
J
G
GA200TD120U
G2
0
= 0
20
800
40
60
1200
80 100 120 140 160

I =

I =

I =
1600
C
C
C
°
400
200
100
A
A
A
2000
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