GA400TD60U Vishay, GA400TD60U Datasheet - Page 4

• Manufacturer Part Number: GA400TD60U
• Description: IGBT FAST 600V 400A INT-A-PAK
• Manufacturer: Vishay

Specifications of GA400TD60U

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 400A
• Current - Collector (ic) (max): 400A
• Current - Collector Cutoff (max): 2mA
• Input Capacitance (cies) @ Vce: 40.136nF @ 30V
• Power - Max: 1250W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: INT-A-PAK (3 + 4)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -

GA400TD60U
Fig. 4 - Maximum Collector Current vs. Case
500
400
300
200
100
0 . 0 0 1
4
0 . 0 1
0.1
0
0 . 0 0 0 1
1
25
D = 0 .50
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
50
T , Case Temperature ( C)
0.20
0 .10
0 .05
0 .02
0.01
C
Temperature
0 . 0 0 1
75
(T H ER M A L R ES PO N S E)
SIN G L E P UL SE
100
0 . 0 1
°
t , R ecta ngula r Pulse D u ration (sec)
125
1
150
0.1
Fig. 5 - Typical Collector-to-Emitter Voltage
3.0
2.0
1.0
-60 -40 -20
1

V
80 us PULSE WIDTH
GE
vs. Junction Temperature
= 15V
Notes:
1. Duty factor D = t
2. Peak T = P
T , Junction Temperature ( C)
J
0
1 0
J
20
DM
40
x Z
1
60
/ t
thJC
2
P
80 100 120 140 160
DM
+ T
1 0 0

I =

I =

I =
C
C
C
www.irf.com
C
t
1
800
400
200
t 2
°
A
A
A
1 0 0 0
A