GA600GD25S Vishay, GA600GD25S Datasheet - Page 2

• Manufacturer Part Number: GA600GD25S
• Description: IGBT FAST 250V 600A INT-A-PAK
• Manufacturer: Vishay

Specifications of GA600GD25S

• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 250V
• Vce(on) (max) @ Vge, Ic: 1.4V @ 15V, 600A
• Current - Collector (ic) (max): 600A
• Current - Collector Cutoff (max): 2mA
• Input Capacitance (cies) @ Vce: 86.063nF @ 30V
• Power - Max: 1920W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: INT-A-PAK (3 + 4)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -

Electrical Characteristics @ T
Dynamic Characteristics - T
Notes:
1. The thermistor has an average rate of change of 7
V
V
V
∆V
g
I
V
I
∆T
R-T
Q
Qge
Q
t
t
t
t
E
E
E
C
C
C
t
I
Q
di
CES
GES
d(on)
r
d(off)
f
rr
rr
fe
(BR)CES
CE(on)
GE(th)
FM
on
off (1)
ts (1)
ies
oes
res
Consult U.S. Sensor data sheet for P821GS1K for details
2
g
gc
rr
(rec)
DP
GE(th)
25
M
/dt
/∆T
J
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance
Collector-to-Emitter Leaking Current
Diode Forward Voltage - Maximum
Gate-to-Emitter Leakage Current
Pulse Diode Temp Rise
Thermistor, Positive Temp Coefficient
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Energy
Turn-Off Switching Energy
Total Switching Energy
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak ReverseCurrent
Diode Recovery Charge
Diode Peak Rate of Fall of Recovery
During t
Parameter
Parameter
b
J
= 125°C (unless otherwise specified)
J
ƒ
= 25°C (unless otherwise specified)
Min. Typ. Max. Units
Min. Typ. Max. Units
250
738
3.0
—
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—
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—
—
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— 86063 —
—
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—
—
— 12513 —
—
Ω /°C between 20°C and 125°C.
3825 5738
1262 1893
1060
9754
1913
1.25
1.25
720
820
555
950
846
934
105
122
314
632
-11
1.5
1.5
17
80
—
—
—
—
—
—
902
832
250
1.4
6.0
2.0
1.8
1.0
—
—
—
—
20
—
80
—
—
—
—
—
—
—
—
—
—
—
mV/°C V
mA
A/µs
µA
°C
nC
mJ
µC
V
S
V
Ω
pF
ns
ns
A
V
V
V
I
V
V
V
I
I
V
I
I = 100mA,P = 2.5mW/°C (see note 1)
V
I
T
R
I
V
V
See Fig. 17, 19
V
V
ƒ = 1 MHz
I
R
R
V
di/dt = 500A/µs
C
F
F
C
C
C
C
J
GE
GE
GE
CE
CE
GE
GE
GE
CC
CC =
GE
GE
CC
CC =
G1
G1
G2
= 300A, V
= 300A, V
= 300A, t = 150msec, Tc =70°C
= 5.0mA, V
= 600A
= 600A
= 600A
= 25°C
= 6.0V, I
= 25V, I
= 0V, I
= 15V, I
= 15V, I
= 0V, V
= 0V, V
= ±14V (18V zeners gate-emitter)
= 200V, V
= 15Ω, R
= ±15V
= 0V
= 30V
= 15Ω
= 0Ω
150V,
150V
C
CE
CE
GE
C
C
C
Conditions
GE
Conditions
C
= 1mA
G2
= 600A
= 600A
= 600A, T
CE
= 5.0mA,T
= 250V
= 250V, T
= 0V, T
GE
= 0V
= 0Ω,
= 6.0V
= 15V
Inductor load
www.irf.com
J
J
= 125°C
J
C
= 125°C
= 125°C
= 25/125°C