25MT060WF Vishay, 25MT060WF Datasheet - Page 2

• Manufacturer Part Number: 25MT060WF
• Description: IGBT WARP SPEED 600V 50A MTP
• Manufacturer: Vishay

Specifications of 25MT060WF

• Configuration: Full Bridge Inverter
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.85V @ 15V, 25A
• Current - Collector (ic) (max): 50A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 4nF @ 30V
• Power - Max: 900W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: 16-MTP
• Channel Type: N
• Collector-emitter Voltage: 600V
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant, Not Compliant
• Other names: VS-25MT060WF; VS-25MT060WF; VS25MT060WF; VS25MT060WF

25MT060WFAPbF
Vishay High Power Products
Note
(1)
www.vishay.com
2
ELECTRICAL SPECIFICATIONS (T
PARAMETER
Collector to emitter breakdown voltage
Temperature coefficient of breakdown voltage ΔV
Collector to emitter saturation voltage
Gate threshold voltage
Temperature coefficient of threshold voltage
Transconductance
Zero gate voltage collector current
Gate to emitter leakage current
Diode forward voltage drop
SWITCHING CHARACTERISTICS (T
PARAMETER
Total gate charge (turn-on)
Gate to emitter charge (turn-on)
Gate to collector charge (turn-on)
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on switching loss
Turn-off switching loss
Total switching loss
Input capacitance
Output capacitance
Reverse transfer capacitance
Diode reverse recovery time
Diode peak reverse current
Diode Recovery charge
Diode peak rate of fall of
recovery during t
I
CES
includes also opposite leg overall leakage
b
For technical questions, contact:
J
ΔV
J
= 25 °C unless otherwise noted)
SYMBOL
SYMBOL
dI
(Warp Speed IGBT), 50 A
V
(BR)CES
I
= 25 °C unless otherwise specified)
"Full Bridge" IGBT MTP
V
GE(th)
V
CES
(rec)M
(BR)CES
C
I
V
C
C
CE(on)
Q
Q
E
E
E
E
GE(th)
E
E
GES
Q
Q
g
t
I
oes
FM
res
on
off
tot
on
off
tot
ies
rr
rr
fe
ge
gc
rr
g
(1)
/ΔT
/dt
/ΔT
J
J
V
V
V
V
V
V
V
V
V
V
V
V
I
I
I
I
I
V
V
R
V
V
R
V
V
V
V
f = 1.0 MHz
V
I
dI/dt = 200 A/μs
C
C
C
C
C
C
GE
GE
GE
GE
GE
GE
CE
CE
CE
GE
GE
GE
CC
GE
CC
GE
CC
GE
GE
CC
R
g
g
= 25 A;
= 25 A
= 50 A
= 25 A; T
= 50 A; T
= 25 A
= 5 Ω, I
= 5 Ω, I
= 200 V;
= V
= V
= 100 V, I
= 0 V, I
= 0 V, I
= 15 V, I
= 15 V, I
= 15 V, I
= 15 V, I
= 0 V, V
= 0 V, V
= ± 20 V
= 480 V
= 15 V
= 480 V
= ± 15 V, T
= 480 V
= ± 15 V, T
= 0 V
= 30 V
GE
GE
TEST CONDITIONS
TEST CONDITIONS
[e-mail]
, I
, I
C
C
C
C
C
J
J
C
CE
CE
= 25 A
= 25 A
C
C
C
C
= 150 °C
= 250 μA (25 °C to 125 °C)
= 150 °C
= 250 μA
= 4 mA (25 °C to 125 °C)
= 250 μA
C
= 25 A
= 50 A
= 25 A, T
= 50 A, T
= 600 V, T
= 600 V, T
J
J
= 25 A, PW = 80 μs
= 25 °C
= 125 °C
J
J
= 150 °C
= 150 °C
J
J
= 25 °C
= 150 °C
MIN.
MIN.
600
3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Document Number: 94539
TYP.
3610
TYP.
+ 0.6
0.13
0.42
0.55
0.39
0.49
0.88
2.22
2.43
1.65
2.08
1.36
1.57
1.19
1.48
- 17
175
714
112
250
4.5
27
71
58
50
43
-
-
-
-
-
Revision: 01-Mar-09
MAX.
MAX.
± 250
5415
1071
0.20
0.62
0.82
0.59
0.74
1.32
3.14
3.25
1.93
2.45
1.64
1.93
1.42
1.80
250
263
107
10
41
87
6
-
-
-
-
-
-
-
-
UNITS
UNITS
mV/°C
V/°C
A/μs
mA
mJ
μA
nA
nC
nC
pF
ns
V
V
S
V
A