IRAM336-025SB3 International Rectifier, IRAM336-025SB3 Datasheet - Page 9

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IRAM336-025SB3

Manufacturer Part Number
IRAM336-025SB3
Description
IC HYBRID MULTI-CHIP 500V 2A
Manufacturer
International Rectifier
Type
FETr
Datasheet

Specifications of IRAM336-025SB3

Configuration
3 Phase
Current
2A
Voltage
500V
Package / Case
19-SIP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Voltage - Isolation
-
Integrated Bootstrap Functionality
The internal Driver IC in the IRAM336-025SB embeds an integrated bootstrap FET that allows an alternative
drive of the bootstrap supply for a wide range of applications.
There is one bootstrap FET for each channel and it is connected between each of the floating supply (VB1,
VB2, VB3) and Vcc as shown in Figure 3.
The Bootstrap FET of each channel follows the state of the respective low side output stage (i.e., bootFet is
ON when LO is high, it is OFF when LO is low), unless the V
In that case the bootstrap FET stays off until the V
Bootstrap FET is suitable for most PWM modulation schemes and can be used either in parallel with the
external bootstrap network (diode+resistor) or as a replacement of it. The use of the integrated bootstrap
as a replacement of the external bootstrap network may have some limitations in the following situations:
In these cases, better performances can be achieved by using an external bootstrap network.
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When used in non-complementary PWM schemes (typically 6-step modulations).
At a very high PWM duty cycle due to the bootstrap FET equivalent resistance (R
Figure 3. Simplified BootFet Connection
Figure 4. State Diagram
s
voltage returns below that threshold (see Fig. 4).
B
voltage is higher than approximately 1.1(V
IRAM336-025SB
BS
, see page 5).
cc
).
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