IRAM336-025SB International Rectifier, IRAM336-025SB Datasheet - Page 3

• Manufacturer Part Number: IRAM336-025SB
• Description: IC HYBRID 3PH INV 2A 500V SIP-S
• Manufacturer: International Rectifier
• Series: iMOTION™r
• Type: FETr

Specifications of IRAM336-025SB

• Configuration: 3 Phase
• Current: 2A
• Voltage: 500V
• Package / Case: SIP-S
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Voltage - Isolation: -

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Absolute Maximum Ratings indicate substained limits beyond which damage to the device may occur. All voltage
paramaters are absolute voltages referenced to V
V
V
V
V
V
Symbol
V
I
R
V
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the
recommended conditions. All voltages are absolute referenced to V
15V differential.
Symbol
V
V
V
V
V
F
Note 2: Logic operational for V
(please refer to DT97-3 for more details).
Absolute Maximum Ratings (Continued)
MOSFET Characteristics
Recommended Operating Conditions
DSS
p
S1,2,3
B1,2,3
DD
IN,
BIAS
(BR)DSS
DS(ON)
FM
+
B1,2,3
DD
ITRIP
IN
, V
V
F/EN
(V
F/EN
CC
, V
, V
, V
ITRIP
ITRIP
B
) = 15V and T
High side floating supply offset
voltage
High side floating supply
voltage
Low Side and logic fixed supply
voltage
Input voltage LIN, HIN, Fault/EN,
I
Parameter
Drain-to-Source Breakdown
Voltage
Drain-to-Source Leakage Current
Drain-to-Source On Resistance
Diode Forward Voltage Drop
Definition
Positive Bus Input Voltage
High side floating supply voltage
Low side and logic fixed supply voltage
I
Logic input voltage LIN, HIN, Fault/EN, I
Maximum PWM Carrier Frequency
Trip
TRIP
input voltage
A
= 25°C unless otherwise specified. The V
s
from COM-5V to V
SS
SS
.
+500V. Logic state held for V
Min
V
500
---
---
---
---
---
B1,2,3
-0.3
-0.3
-0.3
TRIP
- 20
- Note 2
0.87
0.76
Typ
2.2
5.5
---
5
SS
(V
V
. The V
V
B1,2,3
Lower of
SS
DD
Max
100
DD
+15V) or
2.7
1.0
---
---
---
500
+0.3V
20
parameter is referenced to V
+0.3
S
offset is tested with all supplies biased at
Units Conditions
µA
V
V
IRAM336-025SB
s
from V
V
Min
S
V
V
V
V
V
V
---
10
---
+10
V
V
I
I
I
I
SS
SS
D
D
F
F
IN
IN
=1.0A
=1.0A, T
=1.0A, V
=1.0A, V
=5V, I
=5V, V
SS
-5V to V
V
Typ
S
D
---
15
---
---
---
+15
+
=250µA
J
DD
DD
=500V
=150°C
=15V
=15V, T
SS
-V
SS
BS
V
.
V
V
Max
.
360
S
SS
SS
20
20
+20
+5
+5
J
=150°C
Units
KHz
V
V
V
3