VSKTF200-08HK Vishay, VSKTF200-08HK Datasheet - Page 8

• Manufacturer Part Number: VSKTF200-08HK
• Description: SCR DBL 2SCR 800V 200A MAGNAPAK
• Manufacturer: Vishay

Specifications of VSKTF200-08HK

• Structure: Series Connection - All SCRs
• Number Of Scrs, Diodes: 2 SCRs
• Voltage - Off State: 800V
• Current - Gate Trigger (igt) (max): 200mA
• Current - On State (it (av)) (max): 200A
• Current - On State (it (rms)) (max): 444A
• Current - Non Rep. Surge 50, 60hz (itsm): 7600A, 8000A
• Current - Hold (ih) (max): 600mA
• Mounting Type: Chassis Mount
• Package / Case: 3-MAGN-A-PAK™
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Off-state Leakage Current @ Vdrm Idrm: 50 mA
• Holding Current (ih Max): 6000 mA
• Mounting Style: Screw
• Breakover Current Ibo Max: 8000 A
• Gate Trigger Current (igt): 200 mA
• Gate Trigger Voltage (vgt): 3 V
• Repetitive Peak Forward Blocking Voltage: 800 V
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRKTF200-08HK; IRKTF200-08HK; IRKTF200-08HK

1E4
1E3
1E2
1E4
1E3
1E2
1E1
IRK.F200.. Series
Bulletin I27099 rev. C 03/01
8
1E1
1E1
tp
tp
100
0.1
10
IRK.F 200.. Series
Tra p ezoid a l p ulse
T = 60 C d i/d t 50A/ s
IRK .F200.. Se ries
S inusoid a l p ulse
1
0.01
C
5 00 0
R ectan g u la r g a te pu lse
a ) Reco m m en d ed lo a d lin e fo r
b ) R eco m m end ed lo a d lin e fo r
VG D
1E2
1E2
< = 30% ra ted d i/d t : 1 0V , 20 o h m s
Pulse Base w idth ( s)
Pulse Base w id th ( s)
ra ted d i/d t : 1 0V , 10 o h m s
0 .0 5
2 50 0
IG D
0 .1
0 .2 5
1 0 0 0
Fig. 14 - Maximum On-state Energy Power Loss Characteristics
0 .5
400
1
2 .5
0.1
1E3
1E3
1 5 0
5
Snub b e r circ uit
R = 10 ohm s
C = 0.47 F
V
10 jou les per p u lse
(b )
Fig. 13 - Frequency Characteristics
s
s
D
In sta n ta n eo u s G ate C u rrent (A )
= 80% V
50 H z
Fig. 15 - Gate Characteristics
IRK.F200.. Series
D R M
(a )
1E4
1E4
1E4
1E4
1
E1
E1
1E1
1E1
tp
tp
Frequenc y Lim ite d by PG (AV )
(1) PG M = 8W , tp = 25m s
(2) PG M = 20W , tp = 1m s
(3) PG M = 40W , tp = 5m s
(4) PG M = 80W , tp = 2.5m s
IRK .F200.. Series
Tra pezo id a l p ulse
T = 60 C di/d t 100A/ s
IRK .F200.. Series
Tra p ezoid a l p ulse
d i/d t 50A / s
5000
C
0 .05
(1)
10
1E2
1E2
0 .1
Pulse Base w idth ( s)
Pulse Base w idth ( s)
2 50 0
0 .2 5
(2)
1000
0 .5
1
(3 )
40 0
2 .5
(4)
1 5 0
5
1E3
1E3
100
10 jou les p er p ulse
Snub b e r c irc uit
R = 10 ohm s
C = 0.4 7 F
V
50 H z
s
s
D
www.irf.com
= 80% V
D R M
1E4
1E4