IRKH91/10A Vishay, IRKH91/10A Datasheet - Page 3
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IRKH91/10A
Manufacturer Part Number
IRKH91/10A
Description
SCR DBL LOSCR 1000V 95A ADDAPAK
Manufacturer
Vishay
Datasheet
1.IRKH9112A.pdf
(10 pages)
Specifications of IRKH91/10A
Structure
Series Connection - SCR/Diode
Number Of Scrs, Diodes
1 SCR, 1 Diode
Voltage - Off State
1000V
Current - Gate Trigger (igt) (max)
150mA
Current - On State (it (av)) (max)
95A
Current - On State (it (rms)) (max)
210A
Current - Non Rep. Surge 50, 60hz (itsm)
1785A, 1870A
Current - Hold (ih) (max)
250mA
Mounting Type
Chassis Mount
Package / Case
ADD-A-PAK (3 + 2)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRKH91/10A
IRKH91/10
IRKH91/10
IRKH91/10
IRKH91/10
Triggering
Blocking
www.irf.com
Thermal and Mechanical Specifications
∆R Conduction (per Junction)
(The following table shows the increment of thermal resistance R
(5) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. IRKT91/16AS90.
V
I
I
dv/dt Max. critical rate of rise
P
P
I
-V
V
required to trigger
I
V
I
T
T
R
R
T
wt
RRM
DRM
GM
GT
GD
INS
Devices
GM
G(AV)
GT
GD
stg
J
thJC
thCS
IRK.71
IRK.91
GM
Max. peak reverse and
off-state leakage current
at V
RMS isolation voltage
of off-state voltage (5)
Parameters
Max. peak gate power
Max. average gate power
Max. peak gate current
Max. peak negative
gate voltage
Max. gate voltage
Max. gate current
required to trigger
Max. gate voltage
that will not trigger
Max. gate current
that will not trigger
Parameters
Parameters
Junction operating
temperature range
Storage temp. range
Max. internal thermal
resistance, junction
to case
Typical thermal resistance
case to heatsink
Mounting torque ± 10%
Approximate weight
Case style
RRM
, V
180
0.06
0.04
DRM
o
to heatsink
busbar
120
0.07
0.05
Sine half wave conduction
o
0.09
0.06
90
IRK.71
IRK.71
IRK.71
o
0.165
3.0
3.0
12
2500 (1 min)
3500 (1 sec)
- 40 to 125
TO-240AA
0.12
0.08
- 40 to 125
60
110 (4)
0.25
270
150
500
o
4.0
2.5
1.7
0.1
80
10
15
6
5
3
IRK.91
IRK.91
IRK.91
0.18
0.12
30
0.135
thJC
3.0
3.0
12
o
when devices operate at different conduction angles than DC)
180
0.04
0.03
o
Units
Units
Units
V/µs
K/W
gr (oz)
mA
mA
Nm
W
°C
mA
A
V
V
V
120
0.08
0.05
Rect. wave conduction
o
Conditions
T
T
T
T
T
T
T
rated V
T
rated V
Conditions
T
50 Hz, circuit to base, all terminals
shorted
T
gate open circuit
Conditions
Per module, DC operation
Mounting surface flat, smooth and greased
A mounting compound is recommended
and the torque should be rechecked after
a period of 3 hours to allow for the
spread of the compound
JEDEC
J
J
J
J
J
J
J
J
J
J
0.10
0.06
= - 40°C
= 25°C
= 125°C
= - 40°C
= 25°C
= 125
= 125
90
= 125°C
= 125
= 125
o
DRM
DRM
o
o
C,
C,
o
o
C, linear to 0.67 V
C, gate open circuit
Bulletin I27132 rev. I 09/04
applied
applied
0.13
0.08
60
IRK.71, .91 Series
o
Anode supply = 6V
resistive load
Anode supply = 6V
resistive load
0.18
0.12
30
o
DRM
,
Units
°C/W
3