IRKL105/10A Vishay, IRKL105/10A Datasheet - Page 2

• Manufacturer Part Number: IRKL105/10A
• Description: SCR DBL HISCR 1000V 105A ADDAPAK
• Manufacturer: Vishay

Specifications of IRKL105/10A

• Structure: Series Connection - SCR/Diode
• Number Of Scrs, Diodes: 1 SCR, 1 Diode
• Voltage - Off State: 1000V
• Current - Gate Trigger (igt) (max): 150mA
• Current - On State (it (av)) (max): 105A
• Current - On State (it (rms)) (max): 235A
• Current - Non Rep. Surge 50, 60hz (itsm): 1785A, 1870A
• Current - Hold (ih) (max): 200mA
• Mounting Type: Chassis Mount
• Package / Case: ADD-A-PAK (3 + 2)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRKL105/10A; IRKL105/10; IRKL105/10

IRK.105 Series
Bulletin I27133 rev. H 10/02
ELECTRICAL SPECIFICATIONS
Voltage Ratings
2
On-state Conduction
(1) I
(4) I > p x I
I
I
I
I
or
I
I
I
V
r
V
V
di/dt
I
I
T(AV)
F(AV)
O(RMS
TSM
FSM
2
2
H
L
t
t
T(TO)
TM
FM
t
IRK.105
2
Type number
t for time t
)
Parameters
Max. average on-state
current (Thyristors)
Max. average forward
current (Diodes)
Max. continuous RMS
on-state current.
As AC switch
Max. peak, one cycle
non-repetitive on-state
or forward current
Max. I
Max. I
Max. value of threshold
voltage (2)
Max. value of on-state
slope resistance (2)
Max. peak on-state or
forward voltage
Max. non-repetitive rate
of rise of turned on
current
Max. holding current
Max. latching current
AV
2
2
x
t for fusing
t for fusing (1)
=
I
2
t x t
x
Voltage
Code
04
06
08
10
12
14
16
-
(2) Average power
peak reverse voltage peak reverse voltage
V
RRM
repetitive
IRK.105
15.91
14.52
11.25
10.27
20.00
18.30
159.1
1785
1870
1500
1570
2000
2100
0.80
0.85
2.37
2.25
, maximum
1.64
150
200
400
1000
1200
1400
1600
105
235
400
600
800
=
V
V
T(TO)
x I
T(AV)
+
V
K A
RSM
non-repetitive
Units
r
A/µs
KA
mA
t
m
x (I
V
V
A
2
2
, maximum
s
s
1100
1300
1500
1700
T(RMS)
500
700
900
V
180
T
t =10ms
t =8.3ms reapplied
t =10ms
t =8.3ms reapplied
t =10ms
t =8.3ms no voltage reapplied
t =10ms
t =8.3ms reapplied
t =10ms
t =8.3ms reapplied
t =10ms
t =8.3ms no voltage reapplied
t = 0.1 to 10ms, no voltage reappl. T
Low level (3)
High level (4)
Low level (3)
High level (4)
I
I
T
I
t
T
resistive load, gate open circuit
T
)
Conditions
TM
FM
TM
r
2
C
J
J
J
< 0.5 µs, t
= 25
= 25
= 85
= 25
= p x I
= p x I
=p x I
o
conduction, half sine wave,
o
o
o
o
C, anode supply = 6V,
C, anode supply = 6V, resistive load
C
C, from 0.67 V
T(AV)
F(AV)
(3) 16.7% x p x I
T(AV)
peak off-state voltage,
V
No voltage
100% V
T
No voltage
100% V
T
p
DRM
J
J
> 6 µs
gate open circuit
= 25
= 25
,
I
(RMS)
I
g
, max. repetitive
o
o
= 500mA,
C,
C,
RRM
RRM
1000
1200
1400
1600
400
600
800
or
V
DRM
AV
Initial T
T
T
T
,
Initial T
J
J
J
< I < p x I
= T
= T
= 25°C
half wave,
Sinusoidal
J
J
J
www.irf.com
J
=T
max
max
J
= T
= T
J
max
J
AV
130°C
J
max.
I
I
max.
mA
RRM
DRM
20
I
(RMS)