IRKH162/12 Vishay, IRKH162/12 Datasheet - Page 2
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IRKH162/12
Manufacturer Part Number
IRKH162/12
Description
SCR DBL LOSCR 1200V 160A INTAPAK
Manufacturer
Vishay
Datasheet
1.IRKH13604.pdf
(12 pages)
Specifications of IRKH162/12
Structure
Series Connection - SCR/Diode
Number Of Scrs, Diodes
1 SCR, 1 Diode
Voltage - Off State
1200V
Current - Gate Trigger (igt) (max)
150mA
Current - On State (it (av)) (max)
160A
Current - On State (it (rms)) (max)
355A
Current - Non Rep. Surge 50, 60hz (itsm)
4870A, 5100A
Current - Hold (ih) (max)
200mA
Mounting Type
Chassis Mount
Package / Case
INT-A-PAK (3 + 2)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRKH162/12
VS-IRKH162/12
VS-IRKH162/12
VSIRKH162/12
VSIRKH162/12
VS-IRKH162/12
VS-IRKH162/12
VSIRKH162/12
VSIRKH162/12
2
IRK.136, .142, .162 Series
Bulletin I27117 rev. C 03/02
Electrical Specifications
Voltage Ratings
Forward Conduction
Switching
I
I
I
I
I
V
V
r
r
V
I
I
t
t
t
Type number
IRK.136
IRK.142
IRK.162
T(AV)
T(RMS)
TSM
2
2
H
L
gd
gr
q
t1
t2
t
T (TO)1
T (TO)2
TM
t
Parameter
Max. average on-state current
@ Case temperature
Max. RMS on-state current
Maximum peak, one-cycle
on-state, non-repetitive
surge current
Maximum I
Maximum I
Low level value of threshold
voltage
High level value of threshold
voltage
Low level value on-state
slope resistance
High level value on-state
slope resistance
Maximum forward voltage drop
Maximum holding current
Maximum latching current
Typical delay time
Typical rise time
Typical turn-off time
2
2
t for fusing
t for fusing
Voltage
Code
04
08
12
14
16
V
RRM
/V
peak reverse voltage
IRK.136
DRM
515.5
3200
3360
2700
2800
51.5
36.5
33.3
0.86
1.05
2.02
1.65
1.57
135
300
85
47
, Maximum repetitive V
1200
1400
1600
400
800
V
IRK.142
50 - 200
4500
4712
3785
3963
1013
92.5
71.6
65.4
0.83
1.78
1.43
1.55
140
310
102
200
400
85
1
1
2
IRK.162
4870
5100
4100
4300
1190
76.7
0.98
1.67
1.38
1.54
160
355
119
108
0.8
85
84
RSM
/V
DSM
peak reverse voltage
Units Conditions
KA
, Maximum non-repetitive
KA
m
mA
mA
°C
µs
A
A
A
V
V
2
2
s
s t = 0.1 to 10ms, no voltage reapplied
1300
1500
1700
500
900
V
t = 10ms
t = 8.3ms reapplied
t = 10ms
t = 8.3ms reapplied
t = 10ms
t = 8.3ms reapplied
T
T
I
V
180° conduction, half sine wave
as AC switch
t = 10ms
t = 8.3ms reapplied
(16.7% x x I
(I >
(16.7% x x I
(I >
I
Anode supply = 6V initial I
Anode supply = 6V resistive load = 1
Gate pulse: 10V, 100µs, T
TM
TM
J
J
r
= 50 V; dV/dt = 20 V/µs; Gate 0 V, 100
= 25
= 25
= 300 A; -dI/dt = 15 A/µs; T
=
x I
x I
o
o
x I
C
C
T (AV)
T (AV)
T(AV)
No voltage
100% V
No voltage
100% V
Gate Current=1A dIg/
Vd=0,67% V
), @ T
), @ T
T(AV)
T (AV)
, T
J
< I < x I
< I < x I
= 25°C, 180°conduction
J
J
RRM
RRM
max.
max.
T
J
DRM
I
@ 125°C
T(AV)
T (AV)
= 30A, T
Initial T
= 25°C
RRM /
Sine half wave,
m A
www.irf.com
50
), @ T
), @ T
J
= T
I
DRM
J
= T
J
dt
J
= 25°C
J
J
=1A/µs
max
max.
max.
J
max.