TCST1230 Vishay, TCST1230 Datasheet - Page 2

• Manufacturer Part Number: TCST1230
• Description: SENSR OPTO SLOT 2.8MM TRANS THRU
• Manufacturer: Vishay
• Type: Unamplifiedr

Specifications of TCST1230

• Sensing Distance: 0.110" (2.8mm)
• Sensing Method: Transmissive
• Output Configuration: Phototransistor
• Current - Dc Forward (if): 60mA
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 70V
• Response Time: 15µs, 10µs
• Mounting Type: Through Hole
• Package / Case: PCB Mount
• Operating Temperature: -25°C ~ 85°C
• Forward Voltage: 1.25 V
• Maximum Fall Time: 10 us
• Maximum Operating Temperature: + 85 C
• Maximum Rise Time: 15 us
• Minimum Operating Temperature: - 25 C
• Mounting Style: Through Hole
• Resolution: 0.4 mm
• Wavelength: 950 nm
• Output Collector Emitter Voltage (detector): 70 V
• Maximum Reverse Voltage (emitter): 6 V
• Maximum Collector Current (detector): 100 mA
• Slot Width: 2.8 mm
• Aperture Width: 0.5 mm
• Output Device: Phototransistor
• Power Dissipation: 250 mW
• No. Of Channels: 1
• Optocoupler Output Type: Phototransistor
• Input Current: 60mA
• Output Voltage: 70V
• Opto Case Style: Through Hole
• No. Of Pins: 4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 751-1036-5

TCST1230
Vishay Semiconductors
Note
(1)
ABSOLUTE MAXIMUM RATINGS
Note
(1)
www.vishay.com
2
ABSOLUTE MAXIMUM RATINGS
PARAMETER
OUTPUT (DETECTOR)
Collector emitter voltage
Emitter collector voltage
Collector current
Power dissipation
Junction temperature
BASIC CHARACTERISTICS
PARAMETER
COUPLER
Collector current
Collector emitter saturation
voltage
INPUT (EMITTER)
Forward voltage
Junction capacitance
OUTPUT (DETECTOR)
Collector emitter voltage
Emitter collector voltage
Collector dark current
SWITCHING CHARACTERISTICS
Turn-on time
Turn-off time
T
T
amb
amb
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
95 11088
400
300
200
100
0
0
Phototransistor
Coupled device
IR-diode
T
amb
30
- Ambient Temperature (°C)
60
For technical questions, contact:
90
V
CE
R
R
I
V
F
L
L
I
I
C
C
CE
= 25 V, I
V
TEST CONDITION
= 20 mA, I
= 100 Ω (see figure 2)
= 100 Ω (see figure 2)
(1)
TEST CONDITION
R
= 1 mA, V
= 1 mA, V
120
= 10 V, I
= 0 V, f = 1 MHz
Transmissive Optical Sensor with
I
T
I
I
F
E
C
amb
= 60 mA
= 10 µA
= 1 mA
F
(1)
150
≤ 25 °C
= 0 A, E = 0 lx
C
F
Phototransistor Output
CE
CE
= 0.2 mA
= 20 mA
= 5 V,
= 5 V,
[e-mail]
SYMBOL
V
V
V
I
CEsat
CEO
V
t
t
CEO
ECO
I
C
on
off
C
F
j
SYMBOL
V
V
P
CEO
ECO
I
T
C
V
j
MIN.
0.5
70
7
VALUE
TYP.
1.25
50
10
15
10
100
150
100
70
7
Document Number: 83765
MAX.
100
0.4
1.5
14
Rev. 1.8, 17-Aug-09
UNIT
mW
mA
°C
V
V
UNIT
mA
pF
nA
µs
µs
V
V
V
V