CNA1007H Panasonic - SSG, CNA1007H Datasheet
CNA1007H
Manufacturer Part Number
CNA1007H
Description
PHOTO INTERRUPTER 5MM SLOT PCB
Manufacturer
Panasonic - SSG
Type
Unamplifiedr
Datasheet
1.CNA1007H.pdf
(3 pages)
Specifications of CNA1007H
Sensing Distance
0.197" (5mm)
Sensing Method
Transmissive
Output Configuration
Phototransistor
Current - Dc Forward (if)
50mA
Current - Collector (ic) (max)
20mA
Voltage - Collector Emitter Breakdown (max)
30V
Response Time
5µs, 5µs
Mounting Type
Through Hole
Package / Case
PCB Mount
Operating Temperature
-25°C ~ 85°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Transmissive Photosensors (Photo Interrupters)
CNA1007H
Photo Interrupter
For contactless SW, object detection
efficiency GaAs infrared light emitting diode is used as the light
emitting element, and a high sensitivity phototransistor is used as
the light detecting element. The two elements are arranged so as to
face each other, and objects passing between them are detected.
*1
*2
*
Input (Light
emitting diode)
Output (Photo Collector to emitter voltage V
transistor)
Temperature
Input
characteristics Reverse current (DC)
Output characteristics Collector cutoff current
Transfer
characteristics Collector to emitter saturation voltage V
Switching time measurement circuit
Input power derating ratio is 1.0 mW/˚C at Ta = 25˚C.
Output power derating ratio is 1.33 mW/˚C at Ta = 25˚C.
50
CNA1007H is a transmissive photosensor in which a high
Position detection accuracy : 0.3 mm
Gap width : 5 mm
Horizontal slit type
The type directly attached to PCB ( with a positioning pins)
Absolute Maximum Ratings (Ta = 25˚C)
Overview
Features
Electrical Characteristics (Ta = 25˚C)
Sig.IN
Forward voltage (DC)
Collector current
Response time
Parameter
Parameter
Reverse voltage (DC)
Forward current (DC)
Power dissipation
Collector current
Emitter to collector voltage V
Collector power dissipation
Operating ambient temperature
Storage temperature
V
R
CC
L
Sig.OUT
(Input pulse)
(Output pulse)
Symbol
Symbol Ratings
t
I
r
P
P
CE(sat)
T
V
CEO
V
T
I
I
, t
I
I
CEO
ECO
D
C
R
C
opr
C
stg
F
F
R
*2
*1
f
*
t
r
–25 to +85
– 40 to +100
I
V
V
V
I
V
F
F
CC
R
CE
CE
= 20mA
= 40mA, I
100
= 3V
50
75
20
30
= 5V, I
5
5
= 10V
= 5V, I
t
f
Conditions
C
90%
10%
F
= 1mA, R
Unit
mW
mW
= 20mA
C
mA
mA
˚C
˚C
V
V
V
= 1mA
t
t
r
f
: Rise time (Time required for the collector current to increase
: Fall time (Time required for the collector current to decrease
L
from 10% to 90% of its final value)
from 90% to 10% of its initial value)
= 100
Internal connector
1.2
2
1
+0
–0.1
min
0.5
2
1
5.0 0.15
(10.0)
14.0
Pin connection
A
A'
1.8
3
4
1.25
typ
(4-0.45)
5
Device
Center
1.5 0.15
max
200
1.4
0.4
10
14
SEC. A-A'
3
4
6.0
5.0
Unit : mm
(2.54)
Unit
(4-0.45)
mA
nA
(C1)
V
V
A
s
1
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CNA1007H Summary of contents
Page 1
... CNA1007H Photo Interrupter For contactless SW, object detection Overview CNA1007H is a transmissive photosensor in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity phototransistor is used as the light detecting element. The two elements are arranged face each other, and objects passing between them are detected. ...
Page 2
... CNA1007H — – 100 Ambient temperature Ta (˚ — 25˚ –1 10 –2 10 – Forward current I (mA — Ta CEO 10V –1 10 –2 10 – 40 – 100 Ambient temperature Ta (˚ Transmissive Photosensors (Photo Interrupters) I — 25˚ 0.4 0.8 1.2 1.6 2.0 Forward voltage V ( — 25˚C ...
Page 3
... Transmissive Photosensors (Photo Interrupters) I — 100 25˚ 20mA F 80 Criterion Distance d (mm) 6 CNA1007H 3 ...