ESDR0544MDMR4G ON Semiconductor, ESDR0544MDMR4G Datasheet
ESDR0544MDMR4G
Specifications of ESDR0544MDMR4G
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ESDR0544MDMR4G Summary of contents
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... July, 2010 − Rev. 0 Symbol Value Unit T −55 to +125 ° −55 to +150 °C stg T 260 °C L ESD 8.0 kV ESDR0544MDMR4G †For information on tape and reel specifications, 1 http://onsemi.com MARKING DIAGRAM 10 Micro−10 544M DM SUFFIX AYWG CASE 846B Assembly Location Y = Year W = Work Week G = Pb− ...
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ELECTRICAL CHARACTERISTICS (T Parameter Symbol Reverse Working Voltage V RWM Breakdown Voltage V BR Reverse Leakage Current I R Junction Capacitance C J Junction Capacitance TVS devices are normally selected according to the working peak reverse voltage ...
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... SEATING H PLANE *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...