CM1622-08DE ON Semiconductor, CM1622-08DE Datasheet - Page 4

• Manufacturer Part Number: CM1622-08DE
• Description: 8 CH LCD/CAM EMI FILTER UDFN 16
• Manufacturer: ON Semiconductor

Specifications of CM1622-08DE

• Resistance (ohms): 100
• Capacitance: 12.5pF
• Power (watts): 0.5W, 1/2W
• Package / Case: 16-UDFN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SYMBOL
A
800MHz - 6GHz
C
V
A
V
R
I
V
DIODE
LEAK
TOTAL
R
C
f
1GHz
ESD
DYN
SIG
C
Note 1: T
Note 2: ESD applied to input and output pins with respect to GND, one at a time.
Note 3: Attenuation / RF curves characterized by a network analyzer using microprobes.
PARAMETER
Resistance
Total Channel Capacitance
Capacitance C
Standoff Voltage
Diode Leakage Current (reverse bias)
Signal Clamp Voltage
In-system ESD Withstand Voltage
Dynamic Resistance
Cut-off Frequency
Absolute Attenuation @ 1GHz from 0dB
Absolute Attenuation @ 800MHz to
a) Human Body Model, MIL-STD-883,
b) Contact Discharge per IEC 61000-4-
Positive
Negative
Z
Level
6GHz from 0dB Level
A
Method 3015
2 Level 4
=25
SOURCE
°
C unless otherwise specified.
= 50Ω, Z
ELECTRICAL OPERATING CHARACTERISTICS
LOAD
= 50Ω
Rev.2 | Page 4 of 12 | www.onsemi.com
CONDITIONS
I
At 2.5VDC Reverse Bias, 1MHz,
30mVAC
At 2.5VDC Reverse Bias, 1MHz,
30mVAC
I
V
I
See Note 2
Channel R = 100Ω,
Channel C = 25pF
Z
DC Bias = 0V;
See Notes 1 and 3.
Z
DC Bias = 0V;
See Notes 1 and 3.
R
DIODE
LOAD
= 20mA
SOURCE
SOURCE
DIODE
= 1.0mA
= 10μA
=
= 50Ω, Z
= 50Ω, Z
+
3.3V
LOAD
LOAD
= 50Ω,
= 50Ω,
MIN
±30
±15
6.0
85
20
(NOTE1)
TYP
12.5
0.01
100
115
-35
6.0
7.0
2.3
0.9
25
30
MAX
115
0.2
8.0
30
CM1622
UNITS
MHz
μA
pF
pF
kV
kV
dB
dB
Ω
Ω
Ω
V
V