NTD5862N-1G ON Semiconductor, NTD5862N-1G Datasheet

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NTD5862N-1G

Manufacturer Part Number
NTD5862N-1G
Description
NFET 60V 102A 6MOHM DPAK3
Manufacturer
ON Semiconductor
Datasheet

Specifications of NTD5862N-1G

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5.7 mOhm @ 45A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
90A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
82nC @ 10V
Input Capacitance (ciss) @ Vds
6000pF @ 25V
Power - Max
96W
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Lead Free Status / RoHS Status
Lead free / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NTD5862N-1G
Manufacturer:
ON Semiconductor
Quantity:
25
Part Number:
NTD5862N-1G
Manufacturer:
ON
Quantity:
12 500
NTD5862N
N-Channel Power MOSFET
60 V, 90 A, 5.7 mW
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Limited by package to 50 A continuous.
2. Surface−mounted on FR4 board using 1 in sq pad size
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2010
August, 2010 − Rev. 0
THERMAL RESISTANCE MAXIMUM RATINGS
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Gate−to−Source Voltage
Continuous Drain Cur-
rent (R
Power Dissipation
(R
Pulsed Drain Current
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (L = 0.3 mH)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
− Non−Repetitive (t
Junction−to−Case (Drain)
Junction−to−Ambient − Steady State (Note 2)
Low R
High Current Capability
100% Avalanche Tested
These Devices are Pb−Free, Halogen Free and are RoHS Compliant
(Cu area = 1.127 in sq [2 oz] including traces.
qJC
)
qJC
DS(on)
) (Note 1)
Parameter
Parameter
p
< 10 ms)
(T
Steady
State
J
= 25°C unless otherwise noted)
t
p
= 10 ms
T
T
T
C
C
C
= 100°C
= 25°C
= 25°C
Symbol
Symbol
T
V
R
R
V
V
J
E
I
P
, T
DSS
DM
T
qJC
I
I
qJA
GS
GS
D
AS
S
D
L
stg
Value
−55 to
Value
"20
"30
1.3
335
150
205
260
37
60
90
57
96
90
1
°C/W
Unit
Unit
mJ
°C
°C
W
V
V
V
A
A
A
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
V
(BR)DSS
60 V
(Surface Mount)
CASE 369C
Gate
1 2
STYLE 2
1
ORDERING INFORMATION
DPAK
G
Y
WW
5862N = Device Code
G
Drain
Drain 3
MARKING DIAGRAMS
3
& PIN ASSIGNMENT
N−CHANNEL MOSFET
4
2
http://onsemi.com
Source
5.7 mW @ 10 V
R
4
= Year
= Work Week
= Pb−Free Package
DS(on)
D
Publication Order Number:
MAX
S
(Straight Lead)
Gate
CASE 369D
1
STYLE 2
1
DPAK
2
Drain
Drain
3
4
NTD5862N/D
2
I
D
90 A
3
Source
4
MAX

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NTD5862N-1G Summary of contents

Page 1

... N−CHANNEL MOSFET DPAK DPAK CASE 369C CASE 369D (Straight Lead) STYLE 2 STYLE 2 MARKING DIAGRAMS & PIN ASSIGNMENT 4 Drain 4 Drain 2 Drain 3 1 Gate Source Gate Drain Source Y = Year WW = Work Week 5862N = Device Code G = Pb−Free Package ORDERING INFORMATION Publication Order Number: NTD5862N/D ...

Page 2

... Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 4. Switching characteristics are independent of operating junction temperatures. ORDERING INFORMATION Order Number NTD5862N−1G NTD5862NT4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/ 25°C unless otherwise noted) ...

Page 3

T = 25° 160 120 DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 1. On−Region Characteristics 0.030 0.025 0.020 0.015 0.010 0.005 0.000 ...

Page 4

C iss 5000 4000 3000 2000 C 1000 oss C rss DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 7. Capacitance Variation 1000 ...

Page 5

Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.000001 0.00001 0.0001 TYPICAL CHARACTERISTICS 0.001 0.01 t, PULSE TIME (s) Figure 13. Thermal Response http://onsemi.com 5 0 ...

Page 6

... DETAIL 0.005 (0.13 0.228 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. PACKAGE DIMENSIONS DPAK CASE 369C−01 ISSUE GAUGE SEATING L2 C PLANE PLANE DETAIL A ROTATED SOLDERING FOOTPRINT* 6.20 3 ...

Page 7

... S 0.025 0.040 0.63 1.01 V 0.035 0.050 0.89 1.27 Z 0.155 −−− 3.93 −−− STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NTD5862N/D ...

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