MA2S72800L Panasonic - SSG, MA2S72800L Datasheet

DIODE SCHOTTKY 30V 30MA SS-MINI

MA2S72800L

Manufacturer Part Number
MA2S72800L
Description
DIODE SCHOTTKY 30V 30MA SS-MINI
Manufacturer
Panasonic - SSG
Datasheets

Specifications of MA2S72800L

Voltage - Forward (vf) (max) @ If
1V @ 30mA
Voltage - Dc Reverse (vr) (max)
30V
Current - Average Rectified (io)
30mA (DC)
Current - Reverse Leakage @ Vr
300nA @ 30V
Diode Type
Schottky
Speed
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr)
1ns
Capacitance @ Vr, F
1.5pF @ 1V, 1MHz
Mounting Type
Surface Mount
Package / Case
SS Mini 2P
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MA2S728-(TX)
MA2S728-TX
MA2S72800LTR
MA2S728TR
MA2S728TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MA2S72800L
Manufacturer:
TDK-EPCOS
Quantity:
30 000
Schottky Barrier Diodes (SBD)
MA2S728
Silicon epitaxial planar type
For switching
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
Publication date: April 2004
• High-density mounting is possible
• Low forward voltage V
• Small temperature coefficient of forward characteristic
• Small reverse current I
Detection efficiency
Reverse voltage
Maximum peak reverse voltage
Peak forward current
Forward current
Junction temperature
Storage temperature
Forward voltage
Reverse current
Terminal capacitance
Reverse recovery time
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
3. Absolute frequency of input and output is 2 GHz.
4. * : t
and the leakage of current from the operating equipment.
Parameter
rr
Parameter
measurement circuit
Pulse Generator
(PG-10N)
R
s
= 50 Ω
Bias Application Unit (N-50BU)
*
R
F
and good wave detection efficiency η
A
Symbol
V
I
T
V
T
Wave Form Analyzer
(SAS-8130)
R
FM
I
RM
stg
F
R
a
i
j
Symbol
= 50 Ω
= 25°C ± 3°C
V
V
C
I
t
η
a
R
rr
F1
F2
t
= 25°C
−55 to +125
Rating
150
125
30
30
30
I
I
V
V
I
I
V
R
F
F
F
rr
L
R
R
IN
= 1 mA
= I
= 30 mA
= 1 mA, R
SKH00024BED
= 3.9 kΩ, C
= 30 V
= 1 V, f = 1 MHz
= 3 V
R
= 10 mA
(peak)
Unit
mA
mA
°C
°C
V
V
V
Conditions
L
R
= 100 Ω
, f = 30 MHz
L
= 10 pF
t
r
Input Pulse
10%
t
t
δ = 0.05
p
r
90%
= 0.35 ns
= 2 µs
t
p
Marking Symbol: B
1 : Anode
2 : Cathode
EIAJ : SC-79
t
I
0.80
F
I
I
R
+0.05
–0.03
Output Pulse
F
R
Min
L
= 10 mA
= 10 mA
1
2
= 100 Ω
0.30
±0.05
t
I
rr
rr
= 1 mA
Typ
1.5
1.0
65
0.01
t
±0.01
SSMini2-F1 Package
0.60
Max
300
0.4
1.0
+0.05
–0.03
0
+0
–0.05
0.12
Unit: mm
Unit
+0.05
–0.02
nA
pF
ns
%
V
1

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