MBRB1635 Vishay, MBRB1635 Datasheet - Page 3

• Manufacturer Part Number: MBRB1635
• Description: DIODE SCHOTTKY 35V 16A D2PAK
• Manufacturer: Vishay

Specifications of MBRB1635

• Voltage - Forward (vf) (max) @ If: 630mV @ 16A
• Voltage - Dc Reverse (vr) (max): 35V
• Current - Average Rectified (io): 16A
• Current - Reverse Leakage @ Vr: 200µA @ 35V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Product: Schottky Diodes
• Peak Reverse Voltage: 35 V
• Forward Continuous Current: 16 A
• Max Surge Current: 32 A
• Configuration: Single
• Forward Voltage Drop: 0.63 V
• Maximum Reverse Leakage Current: 200 uA
• Operating Temperature Range: - 65 C to + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant, Lead free / RoHS Compliant
• Other names: *MBRB1635; VS-MBRB1635; VS-MBRB1635; VSMBRB1635; VSMBRB1635

Document Number: 88671
Revision: 08-Nov-07
0.001
Figure 3. Typical Instantaneous Forward Characteristics
0.01
100
0.01
100
0.1
0.1
10
10
1
1
0
0
T
Figure 4. Typical Reverse Characteristics
J
Percent of Rated Peak Reverse Voltage (%)
= 150 °C
0.2
MBR1635 - MBR1645
MBR1650 - MBR1660
Instantaneous Forward Voltage (V)
20
0.4
T
J
40
= 25 °C
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0.6
For technical questions within your region, please contact one of the following:
Pulse Width = 300 µs
1 % Duty Cycle
60
MBR1635 - MBR1645
MBR1650 - MBR1660
T
T
T
0.8
J
J
J
= 125 °C
= 75 °C
= 25 °C
80
1.0
100
1.2
MBR(F,B)1635 thru MBR(F,B)1660
10 000
1000
100
100
0.1
10
1
0.01
0.1
Figure 6. Typical Transient Thermal Impedance
Vishay General Semiconductor
Figure 5. Typical Junction Capacitance
MBR1635 - MBR1645
MBR1650 - MBR1660
0.1
t - Pulse Duration (s)
Reverse Voltage (V)
1
1
10
T
f = 1.0 MHz
V
J
sig
10
= 25 °C
= 50 mVp-p
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100
100
3