IRF7303 International Rectifier, IRF7303 Datasheet - Page 7

MOSFET 2N-CH 30V 4.9A 8-SOIC

IRF7303

Manufacturer Part Number
IRF7303
Description
MOSFET 2N-CH 30V 4.9A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF7303

Fet Type
2 N-Channel (Dual)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
50 mOhm @ 2.4A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
4.9A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
25nC @ 10V
Input Capacitance (ciss) @ Vds
520pF @ 25V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF7303

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0
Re-Applied
Voltage
Reverse
Recovery
Current
+
-
R
D.U.T
G
*
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
VGS = 5V for Logic Level Devices
P.W.
SD
DS
Fig 13. For N-Channel HEXFETS
Waveform
Waveform
Peak Diode Recovery dv/dt Test Circuit
Ripple
Body Diode
Period
Body Diode Forward
+
-
dv/dt controlled by R
Driver same type as D.U.T.
I
D.U.T. - Device Under Test
SD
Diode Recovery
5%
Current
controlled by Duty Factor "D"
Circuit Layout Considerations
dv/dt
Forward Drop
di/dt
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
D =
-
G
Period
P.W.
+
V
V
I
SD
GS
DD
=10V
+
-
V
DD
*
IRF7303

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