IRFHS9351TRPBF International Rectifier, IRFHS9351TRPBF Datasheet - Page 4
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IRFHS9351TRPBF
Manufacturer Part Number
IRFHS9351TRPBF
Description
MOSFET 2P-CH 30V 2.3A PQFN
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRFHS9351TRPBF.pdf
(8 pages)
Specifications of IRFHS9351TRPBF
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
170 mOhm @ 3.1A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
2.3A
Vgs(th) (max) @ Id
2.4V @ 10µA
Gate Charge (qg) @ Vgs
3.7nC @ 10V
Input Capacitance (ciss) @ Vds
160pF @ 25V
Power - Max
1.4W
Mounting Type
Surface Mount
Package / Case
*
Configuration
Dual
Transistor Polarity
Dual P-Channel
Drain-source Breakdown Voltage
- 30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
- 2.3 A
Power Dissipation
1.4 W
Gate Charge Qg
1.9 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Fig 7. Typical Source-Drain Diode Forward Voltage
4
100
0.1
0.01
100
10
Fig 9. Maximum Drain Current vs.
0.1
10
1
6
5
4
3
2
1
0
1
1E-006
0.4
25
D = 0.50
Case Temperature
-V SD , Source-to-Drain Voltage (V)
T J = 150°C
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
0.20
0.05
0.02
0.01
0.6
0.10
50
T C , CaseTemperature (°C)
SINGLE PULSE
( THERMAL RESPONSE )
0.8
75
T J = 25°C
1E-005
1.0
100
V GS = 0V
1.2
125
t 1 , Rectangular Pulse Duration (sec)
0.0001
1.4
150
Fig 10. Threshold Voltage vs. Temperature
0.001
0.01
2.5
2.0
1.5
1.0
0.5
100
0.1
Fig 8. Maximum Safe Operating Area
10
1
-75 -50 -25
0.1
Tc = 25°C
Tj = 150°C
Single Pulse
V DS , Drain-to-Source Voltage (V)
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
T J , Temperature ( °C )
OPERATION IN THIS AREA
LIMITED BY R DS (on)
0
1
0.01
25
50
1msec
75 100 125 150
10
DC
I D = -10uA
www.irf.com
100μsec
10msec
0.1
100