NTMD6N03R2G ON Semiconductor, NTMD6N03R2G Datasheet
NTMD6N03R2G
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NTMD6N03R2GOS
NTMD6N03R2GOSTR
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NTMD6N03R2G Summary of contents
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... Semiconductor Sales Office. DESCRIPTION AND PURPOSE: In connection to ON Semiconductor’s Initial Product Change Notification, number 16091: ON Semiconductor is notifying customers of its use of Copper Wire (in place of Gold Wire) on their MOSFET Products in the SO8 Package. Products assembled with High Cell Density MOSFET Die will be affected. ...
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... Final Product/Process Change Notification #16142 RELIABILITY DATA SUMMARY: SO8 Dual Device: NTMD6N03R2G Test: High Temperature Reverse Bias (HTRB) Conditions: Ta=150'C, Vds= 80% BVdss Rating, Duration : 1008-Hrs, 3-Lots Results: 0/240 Test: High Temperature Gate Bias (HTGB) Conditions: Ta=150'C, Vds= 100% Vgs Rating, Duration : 1008-Hrs, 3-Lots ...
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... There is no change in electrical parametric performance. Characterization data is available upon request. CHANGED PART IDENTIFICATION: SO8 Products assembled with the Copper Wire from the ON Semiconductor facility in Carmona, Philippines will have a Finish Good Date Code representing Work Week 47, 2008 or newer. Issue Date: 20-Aug-2008 Rev ...
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... Final Product/Process Change Notification #16142 AFFECTED DEVICE LIST NTMS10P02R2 NTMS10P02R2G NTMS3P03R2 NTMS3P03R2G NTMS4503NR2 NTMS4503NR2G NTMS4N01R2 NTMS4N01R2G NTMS5P02R2 NTMS5P02R2G NTMS5P02R2SG NTMS7N03R2 NTMS7N03R2G NTMD2C02R2 NTMD2C02R2G NTMD2C02R2SG NTMD2P01R2 NTMD2P01R2G NTMD3P03R2 NTMD3P03R2G NTMD4N03R2 NTMD4N03R2G NTMD6N02R2 NTMD6N02R2G NTMD6N03R2 NTMD6N03R2G NTMD6N04R2G NTMD6P02R2 NTMD6P02R2G NTMD6P02R2SG Issue Date: 20-Aug-2008 Rev.14 Jun 2007 Page ...