SI1058X-T1-GE3 Vishay, SI1058X-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI1058X-T1-GE3
• Description: MOSFET N-CH 20V SC89
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1058X-T1-GE3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 91 mOhm @ 1.3A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Vgs(th) (max) @ Id: 1.55V @ 250µA
• Gate Charge (qg) @ Vgs: 5.9nC @ 5V
• Input Capacitance (ciss) @ Vds: 380pF @ 10V
• Power - Max: 236mW
• Mounting Type: Surface Mount
• Package / Case: *
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 1.3A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 124mohm
• Rds(on) Test Voltage Vgs: 12V
• Threshold Voltage Vgs Typ: 12V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Continuous Drain (id) @ 25° C: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS (T
Document Number: 73894
S10-2542-Rev. D, 08-Nov-10
0.30
0.24
0.18
0.12
0.06
0.00
6
5
4
3
2
1
0
5
4
3
2
1
0
0.0
0
0
I
D
= 1.3 A
On-Resistance vs. Drain Current
1
1
V
0.6
DS
Q
Output Characteristics
g
- Drain-to-Source Voltage (V)
V
I
- Total Gate Charge (nC)
2
D
DS
V
Gate Charge
- Drain Current (A)
GS
= 10 V
2
V
= 5 V thru 3 V
GS
1.2
3
= 2.5 V
V
GS
3
= 4.5 V
4
A
V
V
GS
GS
V
= 25 °C, unless otherwise noted)
V
1.8
GS
GS
= 2.5 V
= 16 V
= 2 V
4
= 1.5 V
5
2.4
6
5
600
500
400
300
200
100
1.8
1.5
1.2
0.9
0.6
0.3
0.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0.0
0
C
Transfer Characteristics Curves vs. Temp.
rss
On-Resistance vs. Junction Temperature
- 25
0.5
4
V
C
V
DS
oss
GS
T
0
J
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
T
Capacitance
25
C
1.0
= 25 °C
8
C
V
iss
I
T
Vishay Siliconix
D
50
GS
C
= 1.3 A
= 125 °C
= 4.5 V
1.5
12
75
V
Si1058X
I
www.vishay.com
D
T
GS
100
C
= 1 A
= 2.5 V
= - 55 °C
2.0
16
125
150
2.5
20
3