DMN3005LK3-13 Diodes Inc, DMN3005LK3-13 Datasheet - Page 2

• Manufacturer Part Number: DMN3005LK3-13
• Description: MOSFET N-CH 30V 14.5A TO252-3L
• Manufacturer: Diodes Inc

Specifications of DMN3005LK3-13

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 14.5A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 46.9nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 4342pF @ 15V
• Power - Max: 1.68W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DMN3005LK3-13DITR

Thermal Characteristics
Electrical Characteristics
Maximum Ratings
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 4) V
Continuous Drain Current (Note 5) V
Pulsed Drain Current (Note 6)
Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient @T
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @T
Operating and Storage Temperature Range
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
DMN3005LK3
Document number: DS33318 Rev. 2 - 2
4. Device mounted on FR-4 PCB, with minimum recommended pad layout, single sided.
5. Device mounted on 2” x 2” FR-4 PCB with high coverage 2oz. copper, single sided.
6.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
Repetitive rating, pulse width limited by junction temperature and current limited by package.
Characteristic
@T
A
= 25°C unless otherwise specified
J
= 25°C
GS
GS
Characteristic
Characteristic
= 10V
= 10V
@T
A
A
A
= 25°C unless otherwise specified
= 25°C (Note 4)
= 25°C (Note 5)
Steady
Steady
State
State
Symbol
R
BV
V
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DS (ON)
t
t
I
I
C
|Y
V
C
GS(th)
C
Q
Q
D(on)
D(off)
DSS
GSS
R
Q
oss
t
t
SD
rss
DSS
iss
gs
gd
r
fs
f
g
g
|
2 of 6
T
T
T
T
A
A
A
A
Min
1.0
30
= 25°C
= 85°C
= 25°C
= 85°C
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
4342
1801
1.76
46.9
14.3
18.6
22.8
73.4
43.5
Typ
669
1.5
3.6
4.9
0.8
7.9
22
-
-
-
±100
Max
1.0
2.0
5.0
6.5
1.0
T
Symbol
-
-
-
-
-
-
-
-
-
-
-
-
-
Symbol
J
R
R
V
V
, T
P
P
I
GSS
θJA
θJA
DSS
I
I
DM
D
D
D
D
STG
Unit
mΩ
nC
nC
nC
μA
nA
pF
pF
pF
ns
ns
ns
ns
V
V
S
V
Ω
-55 to +150
V
V
V
V
V
V
V
V
V
f = 1.0MHz
V
V
I
V
R
D
GS
DS
GS
DS
GS
GS
DS
GS
DS
DS
GS
DS
L
= 15A
Value
Value
= 1.3Ω R
1.68
74.3
30.8
14.5
10.5
±20
4.1
= 0V, I
= 30V, V
= ±20V, V
= V
= 10V, I
= 4.5V, I
= 15V, I
= 0V, I
= 15V, V
= 0V, V
= 4.5V, V
= 15V, V
30
22
16
48
GS
Test Condition
DMN3005LK3
, I
D
S
GS
D
G
D
D
= 20A
= 250μA
D
GS
GS
GS
DS
= 250μA
= 15A
= 3Ω
= 20A
DS
= 20A
= 0V, f = 1MHz
= 0V
= 0V,
= 10V,
© Diodes Incorporated
= 15V,
= 0V
October 2010
°C/W
°C/W
Unit
Unit
°C
W
W
V
V
A
A
A