IRFHS8342TRPBF International Rectifier, IRFHS8342TRPBF Datasheet - Page 3
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IRFHS8342TRPBF
Manufacturer Part Number
IRFHS8342TRPBF
Description
MOSFET N-CH 30V 8.8A PQFN
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRFHS8342TRPBF.pdf
(9 pages)
Specifications of IRFHS8342TRPBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
16 mOhm @ 8.5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
8.8A
Vgs(th) (max) @ Id
2.35V @ 25µA
Gate Charge (qg) @ Vgs
8.7nC @ 10V
Input Capacitance (ciss) @ Vds
600pF @ 25V
Power - Max
2.1W
Mounting Type
Surface Mount
Package / Case
*
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
25 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
19 A
Power Dissipation
2.1 W
Gate Charge Qg
4.2 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFHS8342TRPBF
Manufacturer:
LG
Quantity:
101
Part Number:
IRFHS8342TRPBF
Manufacturer:
IR
Quantity:
20 000
www.irf.com
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
Fig 3. Typical Transfer Characteristics
10000
1000
Fig 1. Typical Output Characteristics
100
100
100
0.1
1.0
10
10
10
1
0.1
2.0
1
T J = 150°C
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
3.0
T J = 25°C
2.5V
C iss
C rss
C oss
1
f = 1 MHZ
4.0
≤60μs PULSE WIDTH
Tj = 25°C
10
V DS = 15V
≤60μs PULSE WIDTH
10
TOP
BOTTOM
5.0
VGS
10V
7.0V
5.0V
4.5V
3.5V
3.3V
2.8V
2.5V
100
100
6.0
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
100
Fig 4. Normalized On-Resistance vs. Temperature
1.8
1.6
1.4
1.2
1.0
0.8
0.6
14
12
10
10
8
6
4
2
0
1
0.1
-60 -40 -20 0
0
Fig 2. Typical Output Characteristics
I D = 8.5A
I D = 8.5A
V GS = 10V
2
V DS , Drain-to-Source Voltage (V)
T J , Junction Temperature (°C)
Q G Total Gate Charge (nC)
V DS = 24V
V DS = 15V
V DS = 6.0V
2.5V
4
1
20 40 60 80 100 120 140 160
IRFHS8342PbF
6
≤60μs PULSE WIDTH
Tj = 150°C
8
10
TOP
BOTTOM
10
VGS
10V
7.0V
5.0V
4.5V
3.5V
3.3V
2.8V
2.5V
12
100
3