NTMFS5844NLT1G ON Semiconductor, NTMFS5844NLT1G Datasheet - Page 2

• Manufacturer Part Number: NTMFS5844NLT1G
• Description: MOSFET N-CH 60V 60A SO-8FL
• Manufacturer: ON Semiconductor

Specifications of NTMFS5844NLT1G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 2.3V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 1460pF @ 25V
• Power - Max: 3W
• Mounting Type: Surface Mount
• Package / Case: 8-TDFN
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 16 mOhms
• Forward Transconductance Gfs (max / Min): 27 s
• Drain-source Breakdown Voltage: 60 V
• Continuous Drain Current: 60 A
• Power Dissipation: 1.9 W, 3 W, 57 W, 89 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 30 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 3)
CHARGES, CAPACITANCES & GATE RESISTANCE
SWITCHING CHARACTERISTICS (Note 4)
DRAIN−SOURCE DIODE CHARACTERISTICS
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Gate Resistance
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
Parameter
(T
J
= 25°C unless otherwise specified)
V
V
V
Symbol
Q
V
GS(TH)
(BR)DSS
R
t
(BR)DSS
Q
t
d(OFF)
C
I
C
I
d(ON)
GS(TH)
C
V
DS(on)
G(TOT)
Q
Q
Q
DSS
GSS
V
t
g
G(TH)
T
R
RR
OSS
RSS
t
t
t
t
SD
ISS
FS
GS
GD
GP
a
b
RR
r
f
J
G
/T
http://onsemi.com
/
J
V
V
V
GS
GS
GS
V
V
V
GS
V
V
V
2
V
= 4.5 V, V
I
= 10 V, V
DS
V
GS
= 0 V, f = 1 MHz, V
V
GS
V
GS
GS
S
GS
I
DS
D
GS
GS
V
= 0 V, dIS/dt = 100 A/ms,
= 10 A
= 60 V
= 4.5 V
DS
= 10 A, R
= 0 V,
= 10 V
= 0 V,
Test Condition
= 4.5 V, V
= 0 V, V
= V
= 0 V, I
= 5 V, I
I
S
DS
DS
DS
= 10 A
, I
D
= 48 V; I
GS
= 48 V; I
D
G
D
DS
= 250 mA
= 250 mA
= 2.5 W
= 10 A
= ±20 V
= 48 V,
T
T
T
T
DS
J
I
I
J
J
D
D
J
D
= 125°C
D
= 125°C
= 25 °C
= 25°C
= 10 A
= 10 A
= 25 V
= 10 A
= 10 A
Min
60
1.5
0.79
0.65
1460
Typ
10.2
0.62
150
6.0
57
6.2
1.0
4.0
8.0
3.0
12
25
20
10
19
13
13
27
96
30
15
±100
Max
100
1.2
2.3
12
16
1
mV/°C
mV/°C
Unit
mA
nA
mW
ns
ns
nC
nC
pF
V
V
W
V
S
V