NTD4969N-1G ON Semiconductor, NTD4969N-1G Datasheet - Page 6
![MOSFET N-CH 30V 41A IPAK-4](/photos/5/60/56062/dpak_369d___01_sml.jpg)
NTD4969N-1G
Manufacturer Part Number
NTD4969N-1G
Description
MOSFET N-CH 30V 41A IPAK-4
Manufacturer
ON Semiconductor
Datasheet
1.NTD4969N-1G.pdf
(7 pages)
Specifications of NTD4969N-1G
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
9 mOhm @ 30A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
9.4A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
9nC @ 4.5V
Input Capacitance (ciss) @ Vds
837pF @ 15V
Power - Max
1.38W
Mounting Type
Through Hole
Package / Case
TO-251-3 Long Leads, IPak, TO-251AB
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
19 mOhms
Forward Transconductance Gfs (max / Min)
36 s
Drain-source Breakdown Voltage
30 V
Continuous Drain Current
12.7 A
Power Dissipation
1.38 W, 2.56 W, 26.3 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Gate Charge Qg
9 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NTD4969N-1G
Manufacturer:
ON
Quantity:
12 500
L3
L4
b2
e
1
b3
4
2
E
3
b
A
D
0.005 (0.13)
B
*For additional information on our Pb−Free strategy and soldering
M
DETAIL A
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
C
c
0.228
5.80
L2
A
GAUGE
PLANE
PACKAGE DIMENSIONS
DPAK (SINGLE GUAGE)
ROTATED 90 CW
SOLDERING FOOTPRINT*
c2
DETAIL A
H
C
0.244
http://onsemi.com
L
6.20
CASE 369AA−01
L1
ISSUE B
5
6
0.102
2.58
A1
H
0.118
3.00
0.063
1.60
C
SCALE 3:1
Z
SEATING
PLANE
0.243
6.17
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
5. DIMENSIONS D AND E ARE DETERMINED AT THE
6. DATUMS A AND B ARE DETERMINED AT DATUM
inches
mm
Y14.5M, 1994.
MENSIONS b3, L3 and Z.
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
OUTERMOST EXTREMES OF THE PLASTIC BODY.
PLANE H.
STYLE 2:
DIM
A1
b2
b3
c2
L1
L2
L3
L4
PIN 1. GATE
A
b
D
E
H
L
Z
c
e
2. DRAIN
3. SOURCE
4. DRAIN
0.086
0.000
0.025
0.030
0.180
0.018
0.018
0.235
0.250
0.370
0.055
0.035
0.155
MIN
−−−
0.090 BSC
0.108 REF
0.020 BSC
INCHES
0.094
0.005
0.035
0.045
0.215
0.024
0.024
0.245
0.265
0.410
0.070
0.050
0.040
MAX
−−−
MILLIMETERS
2.18
0.00
0.63
0.76
4.57
0.46
0.46
5.97
6.35
9.40
1.40
0.89
3.93
MIN
−−−
2.29 BSC
0.51 BSC
2.74 REF
10.41
MAX
2.38
0.13
0.89
1.14
5.46
0.61
0.61
6.22
6.73
1.78
1.27
1.01
−−−