NTMFS4926NT1G ON Semiconductor, NTMFS4926NT1G Datasheet

NTMFS4926NT1G

Manufacturer Part Number

NTMFS4926NT1G

Description

MOSFET N-CH 30V 44A SO-8FL

Manufacturer

ON Semiconductor

Datasheet

1.NTMFS4926NT1G.pdf (7 pages)

Specifications of NTMFS4926NT1G

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

7 mOhm @ 30A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

Vgs(th) (max) @ Id

2.2V @ 250µA

Gate Charge (qg) @ Vgs

8.7nC @ 4.5V

Input Capacitance (ciss) @ Vds

1004pF @ 15V

Power - Max

920mW

Mounting Type

Surface Mount

Package / Case

8-TDFN

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

12 mOhms

Forward Transconductance Gfs (max / Min)

17 s

Drain-source Breakdown Voltage

30 V

Continuous Drain Current

44 A

Power Dissipation

0.92 W, 2.7 W, 6.13 W, 21.6 W

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Gate Charge Qg

8.7 nC

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

NTMFS4926NT1G

Manufacturer:

ON/安森美

Quantity:

20 000

Company:

H&T Electronics

Part Number:

NTMFS4926NT1G

Quantity:

1 278

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NTMFS4926N

Power MOSFET

30 V, 44 A, Single N−Channel, SO−8 FL

Features

•

Applications

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.

2. Surface−mounted on FR4 board using the minimum recommended pad size.

February, 2011 − Rev. 1

MAXIMUM RATINGS

Drain−to−Source Voltage

Gate−to−Source Voltage

Continuous Drain

Current R

(Note 1)

Power Dissipation

Continuous Drain

Current R

(Note 1)

Power Dissipation

Continuous Drain

Current R

(Note 2)

Power Dissipation

Continuous Drain

Current R

(Note 1)

Power Dissipation

Pulsed Drain

Current

Current Limited by Package

Operating Junction and Storage

Temperature

Source Current (Body Diode)

Drain to Source DV/DT

Single Pulse Drain−to−Source Avalanche

Energy (T

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

Compliant

Low R

Low Capacitance to Minimize Driver Losses

Optimized Gate Charge to Minimize Switching Losses

Optimized for 5 V, 12 V Gate Drives

These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

CPU Power Delivery

DC−DC Converters

qJA

qJC

= 21 A

≤ 10 s (Note 1)

(Note 1)

(Note 2)

(Note 1)

DS(on)

qJA

qJC

, L = 0.1 mH, R

= 25°C, V

≤ 10 s

to Minimize Conduction Losses

Parameter

Steady

State

= 24 V, V

= 25°C, t

= 25 W)

= 25°C unless otherwise stated)

= 100°C

= 10 V,

=100°C

= 10 ms

= 25°C

Symbol

dV/d

Dmax

DSS

STG

−55 to

Value

+150

15.5

2.70

23.4

14.8

6.13

0.92

21.6

±20

182

100

260

9.8

9.0

5.7

6.0

V/ns

Unit

°C

†For information on tape and reel specifications,

NTMFS4926NT1G

NTMFS4926NT3G

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

SO−8 FLAT LEAD

(BR)DSS

30 V

(Note: Microdot may be in either location)

Device

CASE 488AA

G (4)

STYLE 1

ORDERING INFORMATION

N−CHANNEL MOSFET

= Assembly Location

= Year

= Work Week

= Pb−Free Package

http://onsemi.com

12.0 mW @ 4.5 V

7.0 mW @ 10 V

D (5,6)

DS(ON)

(Pb−Free)

Package

SO−8 FL

Publication Order Number:

MAX

S (1,2,3)

MARKING

DIAGRAM

NTMFS4926N/D

AYWWG

Tape & Reel

4926N

Shipping

1500 /

5000 /

44 A

MAX

†

Related parts for NTMFS4926NT1G

NTMFS4926NT1G Summary of contents

Page 1

... G (Note: Microdot may be in either location 182 100 A Dmax Device T , −55 to °C J NTMFS4926NT1G T +150 STG NTMFS4926NT3G dV/d 6.0 V/ †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications T 260 ° ...

Page 2

THERMAL RESISTANCE MAXIMUM RATINGS Parameter Junction−to−Case (Drain) Junction−to−Ambient – Steady State (Note 3) Junction−to−Ambient – Steady State (Note 4) Junction−to−Ambient – (t ≤ (Note 3) 3. Surface−mounted on FR4 board using 1 sq−in pad Cu. 4. ...

Page 3

ELECTRICAL CHARACTERISTICS Parameter SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge PACKAGE PARASITIC VALUES Source Inductance Drain Inductance ...

Page 4

25°C 4 DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 1. On−Region Characteristics 0.015 0.014 0.013 0.012 0.011 0.010 0.009 ...

Page 5

C iss 1000 800 600 C oss 400 C 200 rss DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 7. Capacitance Variation 1000 ...

Page 6

D = 0.5 0.2 10 0.1 0.05 0.02 1 0.01 0.1 SINGLE PULSE 0.01 0.000001 0.00001 0.0001 TYPICAL CHARACTERISTICS 0.001 0.01 0.1 t, TIME (ms) Figure 13. Thermal Response http://onsemi.com 100 1000 ...

Page 7

... M 3.200 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81− ...

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