NTD4965N-1G ON Semiconductor, NTD4965N-1G Datasheet - Page 5
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NTD4965N-1G
Manufacturer Part Number
NTD4965N-1G
Description
MOSFET N-CH 30V 68A IPAK-4
Manufacturer
ON Semiconductor
Datasheet
1.NTD4965N-1G.pdf
(7 pages)
Specifications of NTD4965N-1G
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
4.7 mOhm @ 30A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
13A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
17.2nC @ 4.5V
Input Capacitance (ciss) @ Vds
1710pF @ 15V
Power - Max
1.39W
Mounting Type
Through Hole
Package / Case
TO-251-3 Long Leads, IPak, TO-251AB
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
4.7 mOhms
Forward Transconductance Gfs (max / Min)
52 s
Drain-source Breakdown Voltage
30 V
Continuous Drain Current
17.8 A
Power Dissipation
1.39 W, 2.6 W, 38.5 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Gate Charge Qg
17.2 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NTD4965N-1G
Manufacturer:
ON
Quantity:
12 500
1000
1000
0.01
2400
2200
2000
1800
1600
1400
1200
1000
100
100
0.1
800
600
400
200
10
10
0.01
1
1
0
1
0
V
I
V
D
Figure 11. Maximum Rated Forward Biased
0 V < V
Single Pulse
T
DD
GS
C
= 15 A
= 25°C
= 15 V
= 10 V
V
Figure 9. Resistive Switching Time
t
DS
V
d(off)
5
GS
Variation vs. Gate Resistance
Figure 7. Capacitance Variation
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
0.1
t
, DRAIN−TO−SOURCE VOLTAGE (V)
< 10 V
f
R
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
G
Safe Operating Area
, GATE RESISTANCE (W)
C
10
rss
C
C
10
1
oss
iss
15
TYPICAL PERFORMANCE CURVES
20
10
T
V
J
GS
25
= 25°C
http://onsemi.com
10 ms
100 ms
t
t
1 ms
10 ms
dc
= 0 V
d(on)
r
100
100
30
5
40
36
32
28
24
20
16
12
10
30
25
20
15
10
8
4
0
9
8
7
6
5
4
3
2
1
5
0
0
0.4
25
0
Figure 8. Gate−to−Source and Drain−to−Source
Figure 10. Diode Forward Voltage vs. Current
V
Figure 12. Maximum Avalanche Energy vs.
GS
2
T
Q
J
= 0 V
gs
, STARTING JUNCTION TEMPERATURE (°C)
4
V
0.5
SD
Starting Junction Temperature
50
, SOURCE−TO−DRAIN VOLTAGE (V)
6
Q
Voltage vs. Total Charge
G
T
, TOTAL GATE CHARGE (nC)
J
8
= 125°C
0.6
Q
10
gd
75
12
0.7
14
Q
T
16
100
18
0.8
20
22
I
T
V
V
T
D
125
J
J
I
DD
GS
0.9
D
= 30 A
= 25°C
= 25°C
= 28 A
24
= 15 V
= 10 A
26
1.0
28
150