BLF7G20L-140P,118 NXP Semiconductors, BLF7G20L-140P,118 Datasheet - Page 3

• Manufacturer Part Number: BLF7G20L-140P,118
• Description: TRANSISTOR PWR LDMOS SOT1121
• Manufacturer: NXP Semiconductors

Specifications of BLF7G20L-140P,118

• Package / Case: SOT-1121A
• Transistor Type: LDMOS
• Frequency: 1.81GHz ~ 1.88GHz
• Gain: 17.5dB
• Voltage - Rated: 65V
• Current - Test: 850mA
• Voltage - Test: 28V
• Power - Output: 125W
• Mounting Style: SMD/SMT
• Resistance Drain-source Rds (on): 0.15 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single
• Drain-source Breakdown Voltage: 65 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

NXP Semiconductors
6. Characteristics
7. Test information
BLF7G20LS-140P
Product data sheet
7.1 Ruggedness in class-AB operation
Table 6.
T
Table 7.
f = 1805 MHz and 1880 MHz; RF performance at V
2 sections combined unless otherwise specified; in a class-AB production test circuit.
The BLF7G20LS-140P is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: V
I
Symbol Parameter
V
V
I
I
I
g
R
Symbol
Mode of operation: GSM EDGE; P
G
RL
η
ACPR
ACPR
EVM
EVM
Mode of operation: CW; P
G
η
Dq
DSS
DSX
GSS
j
fs
D
D
(BR)DSS
GS(th)
DS(on)
p
p
= 25
in
= 850 mA; P
rms
M
400k
600k
°
C; per section unless otherwise specified.
drain-source breakdown voltage
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance
Characteristics
Application information
Parameter
power gain
input return loss
drain efficiency
adjacent channel power ratio (400 kHz)
adjacent channel power ratio (600 kHz)
RMS EDGE signal distortion error
peak EDGE signal distortion error
power gain
drain efficiency
All information provided in this document is subject to legal disclaimers.
L
= 140 W (CW); f = 1805 MHz.
Rev. 2 — 17 August 2010
L(AV)
= 125 W
L(AV)
= 60 W
Conditions
V
V
V
V
V
V
V
V
I
D
GS
DS
GS
GS
DS
GS
DS
GS
= 3.15 A
= 10 V; I
= 10 V
= 10 V; I
= 0 V; I
= 0 V; V
= V
= 11 V; V
= V
DS
GS(th)
GS(th)
Conditions
= 28 V; I
BLF7G20LS-140P
D
DS
D
D
= 0.9 mA
+ 3.75 V;
+ 3.75 V;
DS
= 90 mA
= 2.5 A
= 28 V
= 0 V
Dq
= 850 mA; T
Power LDMOS transistor
Min Typ
16.3 17.5
-
37
-
-
-
16
48
-
Min Typ
65
1.5
-
14
-
-
-
DS
case
= 28 V;
© NXP B.V. 2010. All rights reserved.
−15
41
−61
−75
2.7
8.5
17
54
-
1.9
-
-
-
6.45
0.15
= 25
Max
-
−8
-
−56.5 dBc
−69.5 dBc
4.0
12.5
-
-
°
Max Unit
-
2.3
2
-
200
-
-
C;
3 of 13
V
V
μA
A
nA
S
Ω
Unit
dB
dB
%
%
%
dB
%