MRF8S21120HSR3 Freescale Semiconductor, MRF8S21120HSR3 Datasheet - Page 5

• Manufacturer Part Number: MRF8S21120HSR3
• Description: FET RF N-CH 2.1GHZ 28V NI780HS
• Manufacturer: Freescale Semiconductor

Specifications of MRF8S21120HSR3

• Transistor Type: 2 N-Channel (Dual)
• Frequency: 2.17GHz
• Gain: 17.6dB
• Voltage - Rated: 65V
• Current - Test: 850mA
• Voltage - Test: 28V
• Power - Output: 28W
• Package / Case: NI-780S
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -

RF Device Data
Freescale Semiconductor
19
18
17
16
15
14
13
Figure 2. Output Peak- -to- -Average Ratio Compression (PARC)
18.1
17.9
17.8
17.7
17.6
17.5
17.4
17.3
17.2
17.1
--10
--20
--30
--40
--50
--60
18
--1
--2
--3
--4
--5
1
0
2060
1
0
Broadband Performance @ P
Figure 3. Intermodulation Distortion Products
--1 dB = 26 W
V
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF
G
IM5--L
IM5--U
IRL
η
Compression (PARC) versus Output Power
DD
ps
D
Figure 4. Output Peak- -to- -Average Ratio
2080
= 28 Vdc, P
PARC
TYPICAL CHARACTERISTICS
20
2100
versus Two- -Tone Spacing
V
f = 2140 MHz
DD
P
out
V
Single--Carrier W--CDMA, 3.84 MHz Channel
Bandwidth
ACPR
TWO--TONE SPACING (MHz)
out
DD
= 28 Vdc, I
= 80 W (PEP), I
, OUTPUT POWER (WATTS)
= 28 Vdc, P
2120
f, FREQUENCY (MHz)
40
--2 dB = 36 W
DQ
2140
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
10
= 850 mA
out
IM7--L
IM7--U
DQ
IM3--U
= 28 W (Avg.), I
IM3--L
--3 dB = 48 W
= 850 mA
60
2160
out
= 28 Watts Avg.
2180
DQ
80
= 850 mA
η
2200
ACPR
D
PARC
G
ps
2220
100
100
MRF8S21120HR3 MRF8S21120HSR3
37
36
35
34
33
--33
--34
--35
--36
--37
--38
60
50
40
30
20
10
0
--5
--15
--25
--35
--45
--55
--65
0
--6
--12
--18
--24
--30
--1.2
--1.3
--1.4
--1.5
--1.6
--1.7
5