MRF8P23080HSR3 Freescale Semiconductor, MRF8P23080HSR3 Datasheet
MRF8P23080HSR3
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MRF8P23080HSR3 Summary of contents
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... CASE 465H- -02, STYLE 1 NI- -780S- -4 MRF8P23080HSR3 inA GSA inB GSB (Top View) Figure 1. Pin Connections Value --0.5, +65 DSS --6.0, + --65 to +150 stg T 150 C T 225 J 168 2.39 MRF8P23080HR3 MRF8P23080HSR3 RF /V outA DSA /V outB DSB Unit Vdc Vdc Vdc °C °C °C W W/°C 1 ...
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... Documentation/Application Notes -- AN1955. 3. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table. 4. Each side of device measured separately. 5. Part internally matched both on input and output. 6. Measurement made with device in a Symmetrical Doherty configuration MRF8P23080HR3 MRF8P23080HSR3 2 = 280 mA 0.7 V, 2300 MHz DQA GSB = 280 mA ...
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... VBW res = 16 W Avg. G out F ∆G ∆P1dB Min Typ Max Unit = 280 mA 0.7 Vdc, DQA GSB — 55 — W — 100 — W MHz — 30 — — 55 — MHz — 0.1 — dB — 0.013 — dB/°C — 0.005 — dB/°C MRF8P23080HR3 MRF8P23080HSR3 3 ...
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... Chip Capacitors C15, C21 5.6 pF Chip Capacitors C17, C23 10 μ Chip Capacitors C18, C24 470 μ Electrolytic Capacitors R1 50 Ω, 1/4 W Chip Resistor Z1 2500 MHz Band 90° Chip Hybrid Coupler PCB 0.020″, ε MRF8P23080HR3 MRF8P23080HSR3 C15 C17 C C4 C13 C1 C14 C3 C9 ...
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... RF Device Data Freescale Semiconductor Single--ended λ λ Quadrature combined λ λ λ λ Doherty 4 4 λ λ λ λ Push--pull Possible Circuit Topologies Figure 3. MRF8P23080HR3 MRF8P23080HSR3 5 ...
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... Figure 5. Intermodulation Distortion Products -- --2 13 --3 12 --4 11 --5 10 MRF8P23080HR3 MRF8P23080HSR3 6 TYPICAL CHARACTERISTICS Vdc (Avg.), I DD out DQA V = 0.7 Vdc, Single--Carrier W--CDMA η GSB 3.84 MHz Channel Bandwidth, Input Signal PAR = 7 0.01% Probability on CCDF PARC ACPR 2305 2320 ...
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... MHz --70 -- --90 --100 --9 --7.2 Figure 10. Single- -Carrier W- -CDMA Spectrum 60 0 η --10 ACPR 40 --20 -- --40 10 --50 0 --60 100 2575 2650 3.84 MHz Channel BW +ACPR in 3.84 MHz Integrated BW Integrated BW --5.4 --3.6 --1.8 0 1.8 3.6 5.4 f, FREQUENCY (MHz) MRF8P23080HR3 MRF8P23080HSR3 7 ...
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... Figure 11. Carrier Side Load Pull Performance — Maximum P1dB Tuning f MHz 2300 2350 2400 (1) Maximum efficiency measurement reflects pulsed 1 dB gain compression. Z source Z load Figure 12. Carrier Side Load Pull Performance — Maximum Efficiency Tuning MRF8P23080HR3 MRF8P23080HSR3 Vdc 280 mA DD DQA (1) Max P out Z source Watts dBm Ω ...
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... P1dB 11.4 -- j13.4 2400 P1dB 17.7 -- j9.30 Figure 11. Pulsed CW Output Power versus Input Power @ 28 V Ideal Actual 2400 MHz 2350 MHz 2300 MHz 34.5 36 37.5 P3dB dBm 48.4 48.3 48.3 Z load Ω 3.60 -- j5.30 3.70 -- j5.20 3.10 -- j5.10 MRF8P23080HR3 MRF8P23080HSR3 9 ...
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... MRF8P23080HR3 MRF8P23080HSR3 10 PACKAGE DIMENSIONS RF Device Data Freescale Semiconductor ...
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... RF Device Data Freescale Semiconductor MRF8P23080HR3 MRF8P23080HSR3 11 ...
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... MRF8P23080HR3 MRF8P23080HSR3 12 RF Device Data Freescale Semiconductor ...
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... RF Device Data Freescale Semiconductor MRF8P23080HR3 MRF8P23080HSR3 13 ...
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... Broadband IRL data removed from Fig. 4, Output Peak--to--Average Ratio Compression (PARC) Broadband Performance and Fig. 8, Broadband Frequency Response graphs. Data not valid indicator of product performance due to circuit implementation MRF8P23080HR3 MRF8P23080HSR3 14 REVISION HISTORY Description = thermal resistance value changed from 0.91 to out = thermal resistance value changed from 0 ...
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... Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2010. All rights reserved. MRF8P23080HR3 MRF8P23080HSR3 15 ...