MRF8S7170NR3 Freescale Semiconductor, MRF8S7170NR3 Datasheet
MRF8S7170NR3
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MRF8S7170NR3 Summary of contents
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... SINGLE W- -CDMA LATERAL N- -CHANNEL RF POWER MOSFET CASE 2021- -03, STYLE 1 OM- -780- -2 PLASTIC Symbol Value Unit V --0.5, +70 Vdc DSS V --6.0, +10 Vdc GS V 32, +0 Vdc DD T --65 to +150 °C stg T 150 ° 225 °C J (2,3) Symbol Value Unit R °C/W θJC 0.30 0.37 MRF8S7170NR3 1 ...
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... Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Frequency 728 MHz 748 MHz 768 MHz 1. Part internally matched both on input and output. MRF8S7170NR3 2 Rating 3 = 25°C unless otherwise noted) Symbol I ...
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... P1dB IMD sym VBW res = 50 W Avg. G out F ∆G ∆P1dB Min Typ Max = 1200 mA, 728--768 MHz Bandwidth — 182 — — 16 — — 65 — — 0.5 — — 0.017 — — 0.0048 — MRF8S7170NR3 Unit W MHz MHz dB dB/°C dB/°C 3 ...
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... Figure 1. MRF8S7170NR3 Test Circuit Component Layout Table 6. MRF8S7170NR3 Test Circuit Component Designations and Values Part B1 Ferrite Bead, Short C1 2.7 pF Chip Capacitor C2 2.2 pF Chip Capacitor C3, C4 9.1 pF Chip Capacitors C5 47 μ Electrolytic Capacitor C6 6.8 μF, 100 V Chip Capacitor C7 100 pF Chip Capacitor C8, C9 ...
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... PAR = 7 0.01% Probability on CCDF OUTPUT POWER (WATTS) out Figure 4. Output Peak- -to- -Average Ratio Compression (PARC) versus Output Power --35.5 --7 0 --36 --11 --0.5 --36.5 --15 --1 --37 --19 --1.5 --37.5 --23 --2 --38 --27 --2.5 780 790 100 -- --25 50 -- --40 PARC 35 --45 30 --50 110 130 MRF8S7170NR3 5 ...
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... Channel Bandwidth @ ±5 MHz Offset. 0.001 Input Signal PAR = 7 0.01% Probability on CCDF 0.0001 PEAK--TO--AVERAGE (dB) Figure 7. CCDF W- -CDMA IQ Magnitude Clipping, Single- -Carrier Test Signal MRF8S7170NR3 6 TYPICAL CHARACTERISTICS 728 MHz 748 MHz 768 MHz ps 768 MHz = 28 Vdc 1200 748 MHz 728 MHz ...
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... Z = Test circuit impedance as measured from source gate to ground Test circuit impedance as measured from load drain to ground. Device Input Matching Under Test Network Z Z source load Output Matching Network MRF8S7170NR3 7 ...
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... ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V MRF8S7170NR3 Vdc 1200 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle DD DQ 748 MHz 728 MHz 748 MHz 728 MHz 768 MHz INPUT POWER (dBm) in P1dB ...
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... RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRF8S7170NR3 9 ...
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... MRF8S7170NR3 10 RF Device Data Freescale Semiconductor ...
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... RF Device Data Freescale Semiconductor MRF8S7170NR3 11 ...
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... The following table summarizes revisions to this document. Revision Date 0 Feb. 2010 • Initial Release of Data Sheet 1 Oct. 2010 • Changed Human Body Model ESD rating from Class 1C to Class 2 to reflect recent ESD test results of the device MRF8S7170NR3 12 REVISION HISTORY Description RF Device Data Freescale Semiconductor ...
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... Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2010. All rights reserved. MRF8S7170NR3 13 ...