MRF8S19260HSR6 Freescale Semiconductor, MRF8S19260HSR6 Datasheet

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MRF8S19260HSR6

Manufacturer Part Number
MRF8S19260HSR6
Description
FET RF N-CH 1.9GHZ 30V NI1230S-8
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRF8S19260HSR6

Transistor Type
2 N-Channel (Dual)
Frequency
1.99GHz
Gain
18.2dB
Voltage - Rated
65V
Current - Test
1.6A
Voltage - Test
30V
Power - Output
74W
Package / Case
SOT-1110B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current Rating
-
Noise Figure
-

Available stocks

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Manufacturer
Quantity
Price
Part Number:
MRF8S19260HSR6
Manufacturer:
LGIC
Quantity:
1
© Freescale Semiconductor, Inc., 2010. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
frequencies from 1930 to 1990 MHz. Can be used in Class AB and Class C for
all typical cellular base station modulation formats.
• Typical Single--Carrier W--CDMA Performance: V
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 1960 MHz, 390 Watts CW
• Typical P
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C
• Designed for Digital Predistortion Error Correction Systems
• Optimized for Doherty Applications
• RoHS Compliant
• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
CW Operation @ T
Thermal Resistance, Junction to Case
Designed for CDMA and multi -- carrier base station applications with
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
2. Continuous use at maximum temperature will affect MTTF.
3. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
4. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
1600 mA, P
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Output Power (3 dB Input Overdrive from Rated P
and Common Source S--Parameters
Operation
Derate above 25°C
Case Temperature 85°C, 74 W CW, 30 Vdc, I
Case Temperature 91°C, 260 W CW
calculators by product.
Select Documentation/Application Notes -- AN1955.
Frequency
1930 MHz
1960 MHz
1990 MHz
out
out
@ 1 dB Compression Point ≃ 245 Watts CW
Rating
= 74 Watts Avg., IQ Magnitude Clipping, Channel
C
= 25°C
(dB)
17.6
18.0
18.2
G
ps
(2,3)
Characteristic
(1)
, 30 Vdc, I
33.2
33.6
34.5
(%)
η
D
Symbol
V
DQ
V
V
T
CW
T
DSS
T
stg
GS
DD
C
J
= 1600 mA, 1990 MHz
DQ
Output PAR
= 1600 mA, 1990 MHz
(dB)
DD
5.9
5.8
5.7
out
= 30 Volts, I
)
--65 to +150
--0.5, +65
--6.0, +10
32, +0
Value
1.48
150
225
291
ACPR
(dBc)
--36.0
--35.7
--34.6
DQ
=
W/°C
Unit
Vdc
Vdc
Vdc
°C
°C
°C
W
(1)
Symbol
R
θJC
Document Number: MRF8S19260H
RF
RF
MRF8S19260HR6 MRF8S19260HSR6
inA
1930- -1990 MHz, 74 W AVG., 30 V
MRF8S19260HSR6
inB
MRF8S19260HR6
/V
MRF8S19260HSR6
/V
N.C.
N.C.
MRF8S19260HR6
Figure 1. Pin Connections
GSA
GSB
CASE 375J- -02
CASE 375I- -03
LATERAL N- -CHANNEL
NI- -1230S- -8
RF POWER MOSFETs
NI- -1230- -8
1
2
3
4
SINGLE W- -CDMA
Value
(Top View)
0.30
0.28
(3,4)
Rev. 0, 8/2010
8
7
6
5
VBW
RF
RF
VBW
outA
outB
°C/W
Unit
A
B
/V
/V
DSA
DSB
1

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MRF8S19260HSR6 Summary of contents

Page 1

... LATERAL N- -CHANNEL RF POWER MOSFETs CASE 375I- -03 NI- -1230- -8 MRF8S19260HR6 CASE 375J- -02 NI- -1230S- -8 MRF8S19260HSR6 N. VBW inA GSA outA inB GSB outB VBW 4 5 N.C. B (Top View) Figure 1. Pin Connections (3,4) Symbol Value Unit R °C/W θJC 0.30 0.28 MRF8S19260HR6 MRF8S19260HSR6 /V DSA /V DSB 1 ...

Page 2

... Frequency 1930 MHz 1960 MHz 1990 MHz 1 Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit GG GS(Q) schematic. 2. Part internally matched both on input and output. MRF8S19260HR6 MRF8S19260HSR6 2 = 25°C unless otherwise noted) Symbol I DSS I DSS I GSS V ...

Page 3

... VBW res = 74 W Avg. G out F ∆G ∆P1dB Min Typ Max = 1600 mA, 1930--1990 MHz Bandwidth — 245 — — 15 — — 75 — — 0.6 — — 0.014 — — 0.011 — MRF8S19260HR6 MRF8S19260HSR6 Unit W MHz MHz dB dB/°C dBm/°C 3 ...

Page 4

... Chip Capacitors C22, C23 330 μ Electrolytic Capacitors C24 1.2 pF Chip Capacitor R1, R2, R5 KΩ, 1/4 W Chip Resistors R3, R7 4.75 Ω, 1/4 W Chip Resistors R4 2.37 Ω, 1/4 W Chip Resistor PCB 0.020″, ε MRF8S19260HR6 MRF8S19260HSR6 4 C10 C11 C13* C15* R4 C2* C3* ...

Page 5

... OUTPUT POWER (WATTS) out Figure 5. Output Peak- -to- -Average Ratio Compression (PARC) versus Output Power 36 35 η --30.5 --5 --1 --32 --1.3 --7 --33.5 --1.6 --9 --35 --1.9 --11 PARC --36.5 --2.2 --13 --38 --2.5 --15 2020 2040 100 --25 42 η --30 ACPR 32 --35 --40 27 --45 22 --50 17 --55 12 120 MRF8S19260HR6 MRF8S19260HSR6 5 ...

Page 6

... Input Signal PAR = 7 0.01% Probability on CCDF 0.0001 PEAK--TO--AVERAGE (dB) Figure 8. CCDF W- -CDMA IQ Magnitude Clipping, Single- -Carrier Test Signal MRF8S19260HR6 MRF8S19260HSR6 6 TYPICAL CHARACTERISTICS = 30 Vdc 1600 mA, Single--Carrier W--CDMA, 3.84 MHz 1990 MHz 1960 MHz 1930 MHz 1990 MHz 1960 MHz 1930 MHz ...

Page 7

... Z = Test circuit impedance as measured from source gate to ground Test circuit impedance as measured from load drain to ground. Device Input Matching Under Test Network Z Z source load Output Matching Network MRF8S19260HR6 MRF8S19260HSR6 7 ...

Page 8

... ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 30 V MRF8S19260HR6 MRF8S19260HSR6 Vdc 1600 mA, Pulsed CW, 10 μsec(on) 10% Duty Cycle DD DQ 1930 MHz Actual 1990 MHz 1990 MHz 1930 MHz 1960 MHz INPUT POWER (dBm) ...

Page 9

... RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRF8S19260HR6 MRF8S19260HSR6 9 ...

Page 10

... MRF8S19260HR6 MRF8S19260HSR6 10 RF Device Data Freescale Semiconductor ...

Page 11

... RF Device Data Freescale Semiconductor MRF8S19260HR6 MRF8S19260HSR6 11 ...

Page 12

... MRF8S19260HR6 MRF8S19260HSR6 12 RF Device Data Freescale Semiconductor ...

Page 13

... For Software Part Number search at http://www.freescale.com, and select the “Part Number” link the Software & Tools tab on the part’s Product Summary page to download the respective tool. The following table summarizes revisions to this document. Revision Date 0 Aug. 2010 • Initial Release of Data Sheet RF Device Data Freescale Semiconductor REVISION HISTORY Description MRF8S19260HR6 MRF8S19260HSR6 13 ...

Page 14

... For Literature Requests Only: Freescale Semiconductor Literature Distribution Center 1--800--441--2447 or +1--303--675--2140 Fax: +1--303--675--2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRF8S19260HR6 MRF8S19260HSR6 Document Number: MRF8S19260H Rev. 0, 8/2010 14 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...

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