MRF8P18265HR6 Freescale Semiconductor, MRF8P18265HR6 Datasheet - Page 2

• Manufacturer Part Number: MRF8P18265HR6
• Description: FET RF N-CH 1840MHZ 30V NI1230-8
• Manufacturer: Freescale Semiconductor

Specifications of MRF8P18265HR6

• Transistor Type: N-Channel
• Frequency: 1.88GHz
• Gain: 16dB
• Voltage - Rated: 65V
• Current - Test: 800mA
• Voltage - Test: 30V
• Power - Output: 72W
• Package / Case: SOT-1110A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -

2
MRF8P18265HR6 MRF8P18265HSR6
Table 3. ESD Protection Characteristics
Table 4. Electrical Characteristics
Off Characteristics
On Characteristics
Functional Tests
f = 1880 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured
in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Typical Broadband Performance
P
measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
out
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate--Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Drain--Source On--Voltage
Power Gain
Drain Efficiency
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
1. Each side of device measured separately.
2. Part internally matched both on input and output.
3. Measurement made with device in a Symmetrical Doherty configuration.
(V
(V
(V
(V
(V
(V
= 72 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR
DS
DS
GS
DS
DD
GS
= 65 Vdc, V
= 30 Vdc, V
= 5 Vdc, V
= 10 Vdc, I
= 30 Vdc, I
= 10 Vdc, I
(2,3)
DS
D
DA
D
(1)
(1)
GS
GS
= 200 μAdc)
= 2 Adc)
(In Freescale Doherty Test Fixture, 50 ohm system) V
= 0 Vdc)
= 800 mAdc, Measured in Functional Test)
= 0 Vdc)
= 0 Vdc)
Characteristic
Test Methodology
(3)
Frequency
1805 MHz
1840 MHz
1880 MHz
(In Freescale Doherty Test Fixture, 50 ohm system) V
(T
A
= 25°C unless otherwise noted)
DD
= 30 Vdc, I
Symbol
V
V
V
ACPR
I
PAR
I
I
DS(on)
GS(th)
GS(Q)
G
DSS
DSS
GSS
η
ps
D
(dB)
15.9
16.1
16.0
G
DQA
ps
DD
= 30 Vdc, I
= 800 mA, V
13.8
41.0
Min
1.1
1.8
0.1
6.0
—
—
—
—
44.8
43.4
43.7
(%)
η
D
DQA
GSB
--32.2
0.15
16.0
43.7
Typ
1.9
2.6
6.7
IV (Minimum)
A (Minimum)
2 (Minimum)
—
—
—
= 800 mA, V
= 1.3 V, P
Class
Freescale Semiconductor
Output PAR
(dB)
6.9
7.0
6.7
--28.0
Max
17.0
2.6
3.3
0.3
10
out
—
—
1
1
GSB
RF Device Data
= 72 W Avg.,
= 1.3 V,
(continued)
ACPR
(dBc)
--31.7
--31.7
--32.2
μAdc
μAdc
μAdc
Unit
Vdc
Vdc
Vdc
dBc
dB
dB
%