MRF8P18265HSR6 Freescale Semiconductor, MRF8P18265HSR6 Datasheet

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MRF8P18265HSR6

Manufacturer Part Number
MRF8P18265HSR6
Description
FET RF N-CH 1840MHZ 30V NI1230S8
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRF8P18265HSR6

Transistor Type
N-Channel
Frequency
1.88GHz
Gain
16dB
Voltage - Rated
65V
Current - Test
800mA
Voltage - Test
30V
Power - Output
72W
Package / Case
SOT-1110B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current Rating
-
Noise Figure
-
© Freescale Semiconductor, Inc., 2010. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
from 1805 to 1880 MHz. Can be used in Class AB and Class C for all typical
cellular base station modulation formats.
• Typical Doherty Single--Carrier W--CDMA Performance: V
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 1840 MHz, 280 Watts CW
• Typical P
Features
• Production Tested in a Symmetrical Doherty Configuration
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Large--Signal Load--Pull Parameters and Common
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C Operation
• Designed for Digital Predistortion Error Correction Systems
• RoHS Compliant
• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
Table 2. Thermal Characteristics
Table 1. Maximum Ratings
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
CW Operation @ T
Thermal Resistance, Junction to Case
Designed for CDMA and multicarrier base station applications with frequencies
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select
4. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
I
Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @
0.01% Probability on CCDF.
Output Power (2 dB Input Overdrive from Rated P
Source S--Parameters
DQA
Derate above 25°C
Case Temperature 74°C, 72.5 W CW, 30 Vdc, I
Case Temperature 90°C, 260 W CW
calculators by product.
Documentation/Application Notes -- AN1955.
= 800 mA, V
Frequency
1805 MHz
1840 MHz
1880 MHz
out
@ 3 dB Compression Point ≃ 280 Watts CW
Rating
C
GSB
= 25°C
= 1.3 V, P
(dB)
15.9
16.1
16.0
G
ps
(1,2)
out
(4)
Characteristic
= 72 Watts Avg., IQ Magnitude
, 30 Vdc, I
44.8
43.4
43.7
(%)
η
D
Symbol
V
V
V
CW
T
T
DQA
DSS
T
GS
DD
stg
C
J
DQA
Output PAR
= 800 mA, V
= 800 mA, V
(dB)
6.9
7.0
6.7
out
--65 to +150
--0.5, +65
--6.0, +10
)
32, +0
Value
150
225
446
4.5
DD
GSB
GSB
= 30 Volts,
ACPR
(dBc)
--31.7
--31.7
--32.2
= 1.3 V, 1880 MHz
= 1.3 V, 1880 MHz
W/°C
Unit
Vdc
Vdc
Vdc
°C
°C
°C
W
Document Number: MRF8P18265H
RF
RF
MRF8P18265HR6 MRF8P18265HSR6
inA
1805- -1880 MHz, 72 W AVG., 30 V
MRF8P18265HSR6
inB
MRF8P18265HR6
MRF8P18265HR6
/V
/V
MRF8P18265HSR6
Symbol
N.C.
N.C.
CASE 375I- -03
Figure 1. Pin Connections
GSA
GSB
R
CASE 375J- -02
LATERAL N- -CHANNEL
NI- -1230- -8
θJC
NI- -1230S- -8
RF POWER MOSFETs
1
2
3
4
SINGLE W- -CDMA
(Top View)
Value
0.27
0.25
(2,3)
Rev. 0, 8/2010
8
7
6
5
VBW
RF
RF
VBW
outA
outB
°C/W
Unit
A
B
/V
/V
DSA
DSB
1

Related parts for MRF8P18265HSR6

MRF8P18265HSR6 Summary of contents

Page 1

... SINGLE W- -CDMA LATERAL N- -CHANNEL RF POWER MOSFETs CASE 375I- -03 NI- -1230- -8 MRF8P18265HR6 CASE 375J- -02 NI- -1230S- -8 MRF8P18265HSR6 N. VBW inA GSA outA DSA inB GSB outB DSB VBW N. (Top View) Figure 1. Pin Connections (2,3) Symbol Value Unit R °C/W θJC 0.27 0.25 MRF8P18265HR6 MRF8P18265HSR6 1 ...

Page 2

... MHz Channel Bandwidth @ ±5 MHz Offset. Frequency 1805 MHz 1840 MHz 1880 MHz 1. Each side of device measured separately. 2. Part internally matched both on input and output. 3. Measurement made with device in a Symmetrical Doherty configuration. MRF8P18265HR6 MRF8P18265HSR6 2 = 25°C unless otherwise noted) Symbol I DSS I DSS ...

Page 3

... W Avg. G out F ∆G ∆P1dB Min Typ Max Unit = 800 mA 1.3 V, 1805--1880 MHz DQA GSB — 224 — W — 280 — W MHz — 72 — — 88 — MHz — 0.4 — dB — 0.01 — dB/°C (2) — 0.005 — dB/°C MRF8P18265HR6 MRF8P18265HSR6 3 ...

Page 4

... Chip Capacitors C21, C22 0.3 pF Chip Capacitors C25 0.1 pF Chip Capacitor R1 50 Ω Chip Resistor R2 Ω, 1/4 W Chip Resistors Z1 1900 MHz Band 90° Chip Hybrid Coupler PCB 0.020″, ε MRF8P18265HR6 MRF8P18265HSR6 4 C3 C15 R2 C13 C17 C P C18 R3 C14 C16 ...

Page 5

... RF Device Data Freescale Semiconductor Single--ended λ λ Quadrature combined λ λ λ λ Doherty 4 4 λ λ λ λ Push--pull Possible Circuit Topologies Figure 3. MRF8P18265HR6 MRF8P18265HSR6 5 ...

Page 6

... Center Frequency of 1840 MHz --40 --50 --60 --70 1 Figure 5. Intermodulation Distortion Products 17 16.5 --1 16 --2 -- 15.5 --3 15 --4 14.5 --5 25 MRF8P18265HR6 MRF8P18265HSR6 6 TYPICAL CHARACTERISTICS = 30 Vdc (Avg.), I = 800 mA out DQA GSB η Input Signal PAR = 9 0.01% Probability on CCDF IRL PARC ACPR 1780 1800 1820 1840 1860 ...

Page 7

... Figure 10. Single- -Carrier W- -CDMA Spectrum 60 0 η --10 -- --30 1880 MHz 20 --40 10 --50 0 --60 100 300 10 0 --10 --20 --30 --40 --50 1950 2000 3.84 MHz Channel BW +ACPR in 3.84 MHz --ACPR in 3.84 MHz Integrated BW Integrated BW --7.2 --5.4 --3.6 --1.8 0 1.8 3.6 5.4 f, FREQUENCY (MHz) MRF8P18265HR6 MRF8P18265HSR6 7 ...

Page 8

... MHz 1805 1840 1880 (1) Maximum output power measurement reflects pulsed 1 dB gain compression. Z source Z load Input Load Pull Tuner Figure 12. Carrier Side Load Pull Performance — Maximum Efficiency Tuning MRF8P18265HR6 MRF8P18265HSR6 Vdc 800 mA DD DQA (1) Max P out Z source Watts dBm Ω ...

Page 9

... P1dB 2.38 -- j6.43 1845 P1dB 3.70 -- j7.13 1880 P1dB 4.23 -- j7.74 Figure 13. Pulsed CW Output Power versus Input Power @ 30 V Ideal Actual 1805 MHz 1880 MHz P3dB dBm 53.5 53.5 53.5 Z load Ω 1.30 -- j2.46 1.40 -- j2.51 1.27 -- j2.55 MRF8P18265HR6 MRF8P18265HSR6 9 ...

Page 10

... MRF8P18265HR6 MRF8P18265HSR6 10 PACKAGE DIMENSIONS RF Device Data Freescale Semiconductor ...

Page 11

... RF Device Data Freescale Semiconductor MRF8P18265HR6 MRF8P18265HSR6 11 ...

Page 12

... MRF8P18265HR6 MRF8P18265HSR6 12 RF Device Data Freescale Semiconductor ...

Page 13

... RF Device Data Freescale Semiconductor MRF8P18265HR6 MRF8P18265HSR6 13 ...

Page 14

... For Software Part Number search at http://www.freescale.com, and select the “Part Number” link the Software & Tools tab on the part’s Product Summary page to download the respective tool. The following table summarizes revisions to this document. Revision Date 0 Aug. 2010 • Initial Release of Data Sheet MRF8P18265HR6 MRF8P18265HSR6 14 REVISION HISTORY Description RF Device Data Freescale Semiconductor ...

Page 15

... Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2010. All rights reserved. MRF8P18265HR6 MRF8P18265HSR6 15 ...

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