MRFE6VP61K25HR6 Freescale Semiconductor, MRFE6VP61K25HR6 Datasheet - Page 2

• Manufacturer Part Number: MRFE6VP61K25HR6
• Description: MOSFET RF N-CH 1.25KW NI-1230
• Manufacturer: Freescale Semiconductor

Specifications of MRFE6VP61K25HR6

• Transistor Type: 2 N-Channel (Dual)
• Frequency: 230MHz
• Gain: 24dB
• Voltage - Rated: 125V
• Current - Test: 100mA
• Voltage - Test: 50V
• Power - Output: 1250W
• Package / Case: NI-1230
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -

2
MRFE6VP61K25HR6 MRFE6VP61K25HSR6
Table 3. ESD Protection Characteristics
Table 4. Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Functional Tests (In Freescale Test Fixture, 50 ohm system) V
Pulsed, 100 μsec Pulse Width, 20% Duty Cycle
Pulsed RF Performance (In Freescale Application Test Fixture, 50 ohm system) V
(250 W Avg.), f = 230 MHz, Pulsed, 100 μsec Pulse Width, 20% Duty Cycle
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Gate--Source Leakage Current
Drain--Source Breakdown Voltage
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Drain--Source On--Voltage
Reverse Transfer Capacitance
Output Capacitance
Input Capacitance
Power Gain
Drain Efficiency
Input Return Loss
Load Mismatch
1. Each side of device measured separately.
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
(VSWR 65:1 at all Phase Angles)
GS
GS
DS
DS
DS
DD
GS
DS
DS
DS
= 5 Vdc, V
= 0 Vdc, I
= 50 Vdc, V
= 100 Vdc, V
= 10 Vdc, I
= 50 Vdc, I
= 10 Vdc, I
= 50 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 50 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 50 Vdc, V
D
DS
D
D
D
(1)
= 100 mA)
GS
GS
= 1776 μAdc)
= 100 mAdc, Measured in Functional Test)
= 2 Adc)
GS
= 0 Vdc)
= 0 Vdc)
= 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
= 0 Vdc)
(1)
(1)
(1)
Characteristic
Test Methodology
(T
A
= 25°C unless otherwise noted)
GS
GS
= 0 Vdc)
= 0 Vdc)
DD
= 50 Vdc, I
DQ
Symbol
V
V
V
V
I
I
I
C
DS(on)
C
(BR)DSS
GS(th)
GS(Q)
C
G
= 100 mA, P
IRL
GSS
DSS
DSS
η
Ψ
oss
rss
iss
DD
ps
D
= 50 Vdc, I
out
23.0
72.5
Min
125
1.7
1.4
—
—
—
—
—
—
—
—
DQ
= 1250 W Peak (250 W Avg.), f = 230 MHz,
No Degradation in Output Power
= 100 mA, P
0.15
24.0
74.0
Typ
185
562
--14
2.2
2.2
2.8
—
—
—
—
IV (Minimum)
B (Minimum)
2 (Minimum)
out
Class
Freescale Semiconductor
= 1250 W Peak
Max
26.0
--10
2.7
2.9
10
20
—
—
—
—
—
—
1
RF Device Data
μAdc
μAdc
μAdc
Unit
Vdc
Vdc
Vdc
Vdc
dB
dB
pF
pF
pF
%