2SC5658M3T5G ON Semiconductor, 2SC5658M3T5G Datasheet

2SC5658M3T5G

Manufacturer Part Number

2SC5658M3T5G

Description

TRANS NPN GP 50V 100MA SOT-723

Manufacturer

ON Semiconductor

Datasheet

1.2SC5658M3T5G.pdf (4 pages)

Specifications of 2SC5658M3T5G

Transistor Type

NPN

Current - Collector (ic) (max)

100mA

Voltage - Collector Emitter Breakdown (max)

50V

Vce Saturation (max) @ Ib, Ic

400mV @ 5mA, 60mA

Dc Current Gain (hfe) (min) @ Ic, Vce

120 @ 1mA, 6V

Power - Max

260mW

Frequency - Transition

180MHz

Mounting Type

Surface Mount

Package / Case

SOT-723

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Current - Collector Cutoff (max)

Other names

2SC5658M3T5GOSCT

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

2SC5658M3T5G

Manufacturer:

ROHM

Quantity:

60 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

2SC5658M3T5G

Manufacturer:

Quantity:

30 000

Current page: 1 of 4
Download datasheet (126Kb)

2SC5658M3T5G,

2SC5658RM3T5G

NPN Silicon General

Purpose Amplifier Transistor

applications. This device is housed in the SOT-723 package which is

designed for low power surface mount applications, where board

space is at a premium.

Features

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Device mounted on a FR-4 glass epoxy printed circuit board using the

September, 2009 − Rev. 1

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current − Continuous

Power Dissipation (Note 1)

Junction Temperature

Storage Temperature Range

This NPN transistor is designed for general purpose amplifier

Reduces Board Space

High h

Low V

ESD Performance: Human Body Model; u 2000 V,

Available in 8 mm, 7-inch/3000 Unit Tape and Reel

These are Pb−Free Devices

minimum recommended footprint.

CE(sat)

, 210 −460 (typical)

Rating

, < 0.5 V

Machine Model; u 200 V

= 25°C)

Symbol

(BR)CBO

(BR)CEO

(BR)EBO

stg

−55 ~ + 150

Value

Max

100

260

150

5.0

mAdc

Unit

Vdc

°C

2SC5658M3T5G

2SC5658RM3T5G SOT−723

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Device

PURPOSE AMPLIFIER

ORDERING INFORMATION

SURFACE MOUNT

NPN GENERAL

TRANSISTORS

XX = Specific Device Code

(B9 = 2SC5658M3T5G

RM = 2SC5658RM3T5G)

http://onsemi.com

BASE

COLLECTOR

CASE 631AA

= Date Code

(Pb−Free)

SOT−723

Package

Publication Order Number:

EMITTER

3000/Tape & Reel

MARKING

DIAGRAM

Shipping

2SC5658M3/D

XXM

†

Related parts for 2SC5658M3T5G

2SC5658M3T5G Summary of contents

Page 1

... COLLECTOR BASE EMITTER MARKING DIAGRAM 3 XXM SOT−723 CASE 631AA Specific Device Code (B9 = 2SC5658M3T5G RM = 2SC5658RM3T5G Date Code ORDERING INFORMATION Device Package Shipping 2SC5658M3T5G SOT−723 3000/Tape & Reel (Pb−Free) 2SC5658RM3T5G SOT−723 3000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, ...

Page 2

... Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2 25°C) A Symbol = (BR)CBO = 1.0 mAdc (BR)CEO (BR)EBO = CBO = EBO V CE(sat 2SC5658M3T5G 2SC5658RM3T5G http://onsemi.com 2 Min Typ Max Unit 50 − − Vdc 50 − − Vdc 5.0 − − Vdc − − 0.5 mA − − ...

Page 3

TYPICAL ELECTRICAL CHARACTERISTICS 25° COLLECTOR VOLTAGE (V) CE Figure 1. I − 1.5 1 0.5 0 0.01 0 ...

Page 4

... BOTTOM VIEW *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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