NB6L16DG ON Semiconductor, NB6L16DG Datasheet - Page 3

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NB6L16DG

Manufacturer Part Number
NB6L16DG
Description
IC RCVR DRVR XLATOR BUFF 8-SOIC
Manufacturer
ON Semiconductor
Type
Buffer/Driver, Translatorr
Datasheet

Specifications of NB6L16DG

Number Of Circuits
1
Ratio - Input:output
1:1
Differential - Input:output
Yes/Yes
Input
CML, LVCMOS, LVDS, LVNECL, LVPECL, LVTTL
Output
ECL
Frequency - Max
6GHz
Voltage - Supply
2.375 V ~ 3.465 V
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Frequency-max
6GHz
Package
8SOIC N
Maximum Data Rate
6(Min) Gbps
Power Supply Type
Analog
Typical Supply Current
12 mA
Maximum Operating Supply Voltage
3.6 V
Supply Voltage (max)
3.6 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
Supply Current
12 mA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NB6L16DG
Manufacturer:
ON Semiconductor
Quantity:
2
Part Number:
NB6L16DG
Manufacturer:
ON/安森美
Quantity:
20 000
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
Table 3. MAXIMUM RATINGS
V
V
V
I
V
I
T
T
q
q
q
q
T
Symbol
out
BB
A
stg
JA
JC
JA
JC
sol
CC
EE
I
INPP
PECL Mode Power Supply
NECL Mode Power Supply
PECL Mode Input Voltage
NECL Mode Input Voltage
Output Current
Differential Input Voltage
V
Operating Temperature Range
Storage Temperature Range
Thermal Resistance (Junction−to−Ambient)
Thermal Resistance (Junction−to−Case)
Thermal Resistance (Junction−to−Ambient)
Thermal Resistance (Junction−to−Case)
Wave Solder
BB
Sink/Source
Parameter
Standard
Pb−Free
|D − D|
http://onsemi.com
V
V
V
V
Continuous
Surge
V
V
0 lfpm
500 lfpm
Standard Board
0 lfpm
500 lfpm
Standard Board
v 3 sec @ 248°C
v 3 sec @ 260°C
EE
CC
EE
CC
CC
CC
Condition 1
= 0 V
= 0 V
= 0 V
= 0 V
− V
− V
3
EE
EE
w 2.8 V
t 2.8 V
V
V
SOIC−8
SOIC−8
SOIC−8
TSSOP−8
TSSOP−8
TSSOP−8
I
I
v V
w V
Condition 2
CC
EE
|V
−65 to +150
−40 to +85
41 to 44
41 to 44
CC
Rating
± 0.5
−3.6
−3.6
190
130
185
140
265
265
3.6
3.6
2.8
25
50
− V
EE
|
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
Un-
mA
mA
mA
its
°C
°C
°C
V
V
V
V
V

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