MC9S08MM128CMB Freescale Semiconductor, MC9S08MM128CMB Datasheet - Page 42
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MC9S08MM128CMB
Manufacturer Part Number
MC9S08MM128CMB
Description
IC MCU 8BIT 128K FLASH 81MAPBGA
Manufacturer
Freescale Semiconductor
Series
HCS08r
Datasheet
1.MC9S08MM128CMB.pdf
(52 pages)
Specifications of MC9S08MM128CMB
Core Processor
HCS08
Core Size
8-Bit
Speed
48MHz
Connectivity
I²C, SCI, SPI, USB
Peripherals
LVD, POR, PWM, WDT
Number Of I /o
47
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
12K x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 3.6 V
Data Converters
A/D 8x16b, D/A 1x12b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
81-LBGA
Processor Series
S08MM
Core
HCS08
Data Bus Width
8 bit
Data Ram Size
12 KB
Maximum Clock Frequency
48 MHz
Operating Supply Voltage
- 0.3 V to + 3.8 V
Maximum Operating Temperature
+ 105 C
3rd Party Development Tools
EWS08
Development Tools By Supplier
TWR-SER, TWR-ELEV, TWR-S08MM128-KIT, TWR-SENSOR-PAK, TWR-MCF51MM-KIT, TWR-LCD
Minimum Operating Temperature
- 40 C
On-chip Adc
16 bit
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
Details
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MC9S08MM128CMB
Manufacturer:
Freescale Semiconductor
Quantity:
10 000
1
2
3
4
Electrical Characteristics
2.13
This section provides details about program/erase times and program-erase endurance for the Flash memory.
Program and erase operations do not require any special power sources other than the normal V
information about program/erase operations, see the Memory chapter in the Reference Manual for this device
(MC9S08MM128RM).
42
The frequency of this clock is controlled by a software setting.
These values are hardware state machine controlled. User code does not need to count cycles. This information supplied for
calculating approximate time to program and erase.
Typical endurance for flash was evaluated for this product family on the HC9S12Dx64. For additional information on how
Freescale defines typical endurance, please refer to Engineering Bulletin EB619, Typical Endurance for Nonvolatile Memory.
Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated to
25C using the Arrhenius equation. For additional information on how Freescale defines typical data retention, please refer to
Engineering Bulletin EB618, Typical Data Retention for Nonvolatile Memory.
10
#
1
2
3
4
5
6
7
8
9
Freescale reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
Supply voltage for program/erase
–40C to 105C
Supply voltage for read operation
Internal FCLK frequency
Internal FCLK period (1/FCLK)
Byte program time (random location)
Byte program time (burst mode)
Page erase time
Mass erase time
Program/erase endurance
Data retention
T
T = 25C
L
Flash Specifications
to T
H
= –40C to + 105C
4
Characteristic
2
2
1
3
2
2
Table 23. Flash Characteristics
V
Symbol
prog/erase
V
f
t
t
t
t
t
t
FCLK
Burst
Mass
D_ret
Page
Fcyc
Read
prog
10,000
Min
150
1.8
1.8
15
—
5
100,000
Typical
20,000
4000
100
—
—
—
—
—
9
4
DD
Max
6.67
200
3.6
3.6
—
—
—
supply. For more detailed
Freescale Semiconductor
cycles
years
Unit
t
t
t
t
kHz
Fcyc
Fcyc
Fcyc
Fcyc
s
V
V
C
D
D
D
D
C
C
P
P
P
P