MCF51JE256VLK Freescale Semiconductor, MCF51JE256VLK Datasheet - Page 44
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MCF51JE256VLK
Manufacturer Part Number
MCF51JE256VLK
Description
IC MCU 32BIT 256K FLASH 80LQFP
Manufacturer
Freescale Semiconductor
Series
MCF51JEr
Datasheet
1.TWR-MCF51JE.pdf
(50 pages)
Specifications of MCF51JE256VLK
Core Processor
Coldfire V1
Core Size
32-Bit
Speed
50MHz
Connectivity
CAN, EBI/EMI, I²C, SCI, SPI, USB OTG
Peripherals
LVD, PWM, WDT
Number Of I /o
47
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
32K x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 3.6 V
Data Converters
A/D 12x12b, D/A 1x12b
Oscillator Type
External
Operating Temperature
-40°C ~ 105°C
Package / Case
80-LQFP
Processor Series
MCF51JE
Core
ColdFire V1
Mounting Style
SMD/SMT
3rd Party Development Tools
JLINK-CF-BDM26, EWCF
Development Tools By Supplier
DEMOEM
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MCF51JE256VLK
Manufacturer:
Freescale Semiconductor
Quantity:
10 000
1
2
3
4
Preliminary Electrical Characteristics
3.14
This section provides details about program/erase times and program-erase endurance for the Flash
memory.
Program and erase operations do not require any special power sources other than the normal V
For more detailed information about program/erase operations, see the Memory chapter in the Reference
Manual for this device (MCF51JE256RM).
1-4
The frequency of this clock is controlled by a software setting.
These values are hardware state machine controlled. User code does not need to count cycles. This information supplied for calculating
approximate time to program and erase.
Typical endurance for flash was evaluated for this product family on the HC9S12Dx64. For additional information on how Freescale defines
typical endurance, please refer to Engineering Bulletin EB619, Typical Endurance for Nonvolatile Memory.
Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated to 25°C using the
Arrhenius equation. For additional information on how Freescale defines typical data retention, please refer to Engineering Bulletin EB618, Typical
Data Retention for Nonvolatile Memory.
10
#
1
2
3
4
5
6
7
8
9
Supply voltage for program/erase
-40°C to 105°C
Supply voltage for read operation
Internal FCLK frequency
Internal FCLK period (1/FCLK)
Byte program time (random location)
Byte program time (burst mode)
Page erase time
Mass erase time
Program/erase endurance
Data retention
T
T = 25°C
L
Flash Specifications
to T
H
= –40°C to + 105°C
4
Characteristic
2
2
1
3
2
2
Preliminary — Subject to Change
Table 24. Flash Characteristics
V
Symbol
prog/erase
V
f
t
t
t
t
t
t
FCLK
Burst
Mass
D_ret
Page
Fcyc
Read
prog
10,000
Min
150
1.8
1.8
15
—
5
100,000
Typical
20,000
4000
100
—
—
—
—
—
9
4
Max
6.67
200
3.6
3.6
—
—
—
Freescale Semiconductor
cycles
years
Unit
t
t
t
t
kHz
Fcyc
Fcyc
Fcyc
Fcyc
μs
V
V
DD
supply.
C
D
D
D
D
C
C
P
P
P
P