PK30X128VLQ100 Freescale Semiconductor, PK30X128VLQ100 Datasheet - Page 33
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PK30X128VLQ100
Manufacturer Part Number
PK30X128VLQ100
Description
IC ARM CORTEX MCU 128K 144-LQFP
Manufacturer
Freescale Semiconductor
Series
Kinetisr
Datasheet
1.PK30X128VLQ100.pdf
(72 pages)
Specifications of PK30X128VLQ100
Core Processor
ARM Cortex-M4
Core Size
32-Bit
Speed
100MHz
Connectivity
CAN, EBI/EMI, I²C, IrDA, SDHC, SPI, UART/USART
Peripherals
DMA, I²S, LCD, LVD, POR, PWM, WDT
Number Of I /o
102
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
32K x 8
Voltage - Supply (vcc/vdd)
1.71 V ~ 3.6 V
Data Converters
A/D 37x16b, D/A 2x12b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 105°C
Package / Case
144-LQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
PK30X128VLQ100
Manufacturer:
Freescale Semiconductor
Quantity:
10 000
6.4.1.5 Write endurance to FlexRAM for EEPROM
When the FlexNVM partition code is not set to full data flash, the EEPROM data set size
can be set to any of several non-zero values.
The bytes not assigned to data flash via the FlexNVM partition code are used by the
FTFL to obtain an effective endurance increase for the EEPROM data. The built-in
EEPROM record management system raises the number of program/erase cycles that can
be attained prior to device wear-out by cycling the EEPROM data through a larger
EEPROM NVM storage space.
While different partitions of the FlexNVM are available, the intention is that a single
choice for the FlexNVM partition code and EEPROM data set size is used throughout the
entire lifetime of a given application. The EEPROM endurance equation and graph
shown below assume that only one configuration is ever used.
Writes_subsystem =
where
Freescale Semiconductor, Inc.
• Writes_subsystem — minimum number of writes to each FlexRAM location for
• EEPROM — allocated FlexNVM for each EEPROM subsystem based on DEPART;
• EEESPLIT — FlexRAM split factor for subsystem; entered with the Program
• EEESIZE — allocated FlexRAM based on DEPART; entered with Program Partition
• Write_efficiency —
• n
subsystem (each subsystem can have different endurance)
entered with Program Partition command
Partition command
command
nvmcycd
• 0.25 for 8-bit writes to FlexRAM
• 0.50 for 16-bit or 32-bit writes to FlexRAM
— data flash cycling endurance
EEPROM – 2 × EEESPLIT × EEESIZE
K30 Sub-Family Data Sheet Data Sheet, Rev. 4, 3/2011.
EEESPLIT × EEESIZE
Preliminary
Peripheral operating requirements and behaviors
× Write_efficiency × n
nvmcycd
33